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Professor Anthony Krier

Emeritus Professor

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  1. Published

    High power 4.6 mu m light emitting diodes for CO detection. .

    Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y., 21/12/1999, In: Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    High quality InAs grown by liquid phase epitaxy using gadolinium gettering

    Gao, H. H., Krier, A. & Sherstnev, V. V., 05/1999, In: Semiconductor Science and Technology. 14, 5, p. 441-445 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    High tunability and superluminescence in InAs mid-infrared light emitting diodes. .

    Sherstnev, V. V., Krier, A. & Hill, G., 7/02/2002, In: Journal of Physics D: Applied Physics. 35, 3, p. 196-198 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Highly-mismatched InAs/InSe heterojunction diodes

    Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A., Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. & Patane, A., 2016, In: Applied Physics Letters. 109, 18, 4 p., 182115.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air

    Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  6. Published

    High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

    Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. & Sherstnev, V. V., 24/02/2003, In: Applied Physics Letters. 82, 8, p. 1149-1151 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Montesdeoca Cardenes, D., Lu, Q., Marshall, A. R. J., Krier, A., Botha, J. R. & Carrington, P. J., 01/2019, In: Solar Energy Materials and Solar Cells. 189, p. 233-238 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.

    Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R., 1/02/2010, In: Applied Physics Letters. 96, 5, p. 052115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    H-tailored surface conductivity in narrow band gap In(AsN)

    Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q. & Tan, C. H., 12/01/2015, In: Applied Physics Letters. 106, 2, 4 p., 022111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

    Velichko, A. V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q. & Patane, A., 20/08/2014, In: Physical review B. 90, 7 p., 085309.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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