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Professor Anthony Krier

Emeritus Professor

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  1. Journal article
  2. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

    Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In: AIMS Materials Science. 2, 2, p. 86-96 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air

    Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 8/04/2015, In: ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    H-tailored surface conductivity in narrow band gap In(AsN)

    Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q. & Tan, C. H., 12/01/2015, In: Applied Physics Letters. 106, 2, 4 p., 022111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

    James Asirvatham, J. S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S. I., Marshall, A. R. J. & Krier, A., 2015, In: Materials Research Innovations. 19, 7, p. 512-516 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    Young, M. P., Woodhead, C. S., Roberts, J., Noori, Y. J., Noble, M. T., Krier, A., Smakman, E. P., Koenraad, P. M., Hayne, M. & Young, R. J., 1/11/2014, In: AIP Advances. 4, 11, 6 p., 117127.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

    Velichko, A. V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q. & Patane, A., 20/08/2014, In: Physical review B. 90, 7 p., 085309.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In: Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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