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Research

Professor Anthony Krier

Emeritus Professor

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  1. 2015
  2. Published

    Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

    Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V. & Henini, M., 2015, IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France: IEEE, p. 43-46 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  3. Published

    Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

    Bin Esro, M., Mazzocco, R., Vourlias, G., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  4. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    H-tailored surface conductivity in narrow band gap In(AsN)

    Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q. & Tan, C. H., 12/01/2015, In: Applied Physics Letters. 106, 2, 4 p., 022111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air

    Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 8/04/2015, In: ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

    Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In: AIMS Materials Science. 2, 2, p. 86-96 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In: Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Peculiarities of the hydrogenated In(AsN) alloy

    Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A. & Capizzi, M., 14/09/2015, In: Semiconductor Science and Technology. 30, p. 105030 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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