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Dominic Lane

Research student

  1. 2021
  2. Published

    Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory

    Lane, D. & Hayne, M., 22/06/2021, In: Journal of Physics D: Applied Physics. 54, 35, 7 p., 335104.

    Research output: Contribution to journalJournal articlepeer-review

  3. Published

    ULTRARAM: toward the development of a III-V semiconductor, non-volatile, random-access memory

    Lane, D., Hodgson, P., Potter, R., Beanland, R. & Hayne, M., 31/05/2021, In: IEEE Transactions on Electron Devices. 68, 5, p. 2271-2274 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  4. Published

    Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory

    Lane, D., Hodgson, P., Potter, R. & Hayne, M., 12/05/2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, p. 1-3 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  5. 2020
  6. Published

    IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES

    Lane, D. & Hayne, M., 3/12/2020, IPC No. G11C 16/04 2006.01, Patent No. WO/2020/240186, 28/05/2020

    Research output: Patent

  7. Published

    Simulations of ultra-low power non-volatile cells for random access memory

    Lane, D. & Hayne, M., 1/02/2020, In: IEEE Transactions on Electron Devices. 67, 2, p. 474-480 7 p.

    Research output: Contribution to journalJournal articlepeer-review

  8. 2018
  9. Published

    InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

    Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In: Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.

    Research output: Contribution to journalJournal articlepeer-review

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