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Research

Dr Manoj Kesaria

Formerly at Lancaster University

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  1. Published

    A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE

    Anyebe, E. A., Kesaria, M., Sanchez, A. M. & Zhuang, Q., 1/07/2020, In: Applied Physics A. 126, 6, 8 p., 427.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Characterization of structure and magnetism in Zn1-x(Co-x/Mn-x)O epitaxial thin films as a function of composition

    Negi, D. S., Loukya, B., Dileep, K., Kesaria, M., Kumar, N. & Dutta, R., 11/2013, In: Superlattices and Microstructures. 63, p. 289-297 9 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy

    Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D. & Bensaoula, A., 14/03/2016, In: Journal of Applied Physics. 119, 10, 7 p., 104302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Effect of Pb adatom flux rate on adlayer coverage for Stranski–Krastanov growth mode on Si(1 1 1)7 × 7 surface

    Kesaria, M., Kumar, M., Gupta, G. & Shivaprasad, S. M., 10/2009, In: Applied Surface Science. 256, p. 576-579 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In: Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology

    Thakur, V., Kesaria, M. & Shivaprasad, S. M., 10/2013, In: Solid State Communications. 171, p. 8-13 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 15/09/2011, In: Crystal Growth and Design. 11, 11, p. 4900-4903 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

    Bhasker, H. P., Dhar, S., Kesaria, M., Sain, A. & Shivaprasad, S. M., 24/09/2012, In: Applied Physics Letters. 101, 13, p. 132109-132113 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Highly-mismatched InAs/InSe heterojunction diodes

    Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A., Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. & Patane, A., 2016, In: Applied Physics Letters. 109, 18, 4 p., 182115.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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