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    Rights statement: Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 119 (10), 2016 and may be found at http://scitation.aip.org/content/aip/journal/jap/119/10/10.1063/1.4943179

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    Rights statement: Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 119 (10), 2016 and may be found at http://scitation.aip.org/content/aip/journal/jap/119/10/10.1063/1.4943179

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Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published
  • A. Debnath
  • J. S. Gandhi
  • Manoj Kesaria
  • R. Pillai
  • D. Starikov
  • A. Bensaoula
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Article number104302
<mark>Journal publication date</mark>14/03/2016
<mark>Journal</mark>Journal of Applied Physics
Issue number10
Volume119
Number of pages7
Publication StatusPublished
Early online date9/03/16
<mark>Original language</mark>English

Abstract

The self-induced growth of GaN nanocolumns (NCs) on SixN1−x/Si (111) is investigated as a function of the ratio of molecular to atomic nitrogen species generated via plasma assisted molecular beam epitaxy. Relative concentrations of the molecular and atomic species are calculated using optical emission spectroscopy. The growth rate (GR), diameter, and density of NCs are found to vary with the molecular to atomic nitrogen species relative abundance ratio within the plasma cavity. With increasing ratio, the GR and diameter of NCs increase while the density of NCs seems to be decreasing. The morphologies and the coalescence of GaN NCs exhibit a trend for molecular/atomic ratios up to 11, beyond which they still change but at a lower rate. The detrimental effect of taperedness of the NCs decreases with increasing molecular/atomic ratios. This is possibly because of reduction in radial growth in NCs due to increase in diffusivity of nitrogen species with increasing ratios.

Bibliographic note

Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 119 (10), 2016 and may be found at http://scitation.aip.org/content/aip/journal/jap/119/10/10.1063/1.4943179