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Dr Peter Hodgson

Senior Research Associate

  1. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  3. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  4. Published

    Control of complex quantum structures in droplet epitaxy

    Chawner, J. M. A., Chang, Y., Hodgson, P. D., Hayne, M., Robson, A. J., Sanchez, A. M. & Zhuang, Q., 13/08/2019, In: Semiconductor Science and Technology. 34, 9, 7 p., 095011.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

    Delli, E., Letka, V., Hodgson, P. D., Repiso Menendez, E., Hayton, J., Craig, A. P., Lu, Q., Beanland, R., Krier, A., Marshall, A. R. J. & Carrington, P. J., 20/02/2019, In: ACS Photonics. 6, 2, p. 538–544 7 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

    Delli, E., Hodgson, P. D., Repiso Menendez, E., Craig, A. P., Hayton, J., Lu, Q., Marshall, A. R. J., Krier, A. & Carrington, P. J., 1/06/2019, In: IEEE Photonics Journal. 11, 3, 8 p., 2200608.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. E-pub ahead of print

    Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

    Delli, E., Hodgson, P., Bentley, M., Repiso Menendez, E., Craig, A., Lu, Q., Beanland, R., Marshall, A., Krier, A. & Carrington, P., 29/09/2020, (E-pub ahead of print) In: Applied Physics Letters. 117, 13, 6 p., 131103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

    Hayne, M., Young, R. J., Smakman, E. P., Nowozin, T., Hodgson, P., Garleff, J. K., Rambabu, P., Koenraad, P. M., Marent, A., Bonato, L., Schliwa, A. & Bimberg, D., 3/07/2013, In: Journal of Physics D: Applied Physics. 46, 26, 10 p., 264001.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

    Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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