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Dr Peter Hodgson

Senior Research Associate

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  1. A Detailed Comparison of Measured and Simulated Optical Properties of a Short-period GaAs/Al$_{x}$Ga$_{1-x}$As Distributed Bragg Reflector

    Wilson, T. (Creator), Lancaster University, 13/01/2020, 10.17635/lancaster/researchdata/343

    Dataset

  2. Data set for GaSb quantum rings in GaAs quantum wells

    Hayne, M. (Creator), Hodgson, P. (Creator), Lancaster University, 23/07/2015, 10.17635/lancaster/researchdata/16

    Dataset

  3. Dataset for ULTRARAM: a low-energy, high-endurance, compound-semiconductor memory on silicon

    Hodgson, P. (Creator), Lane, D. (Creator), Carrington, P. (Creator), Delli, E. (Creator), Beanland, R. (Creator), Hayne, M. (Creator), Lancaster University, 24/11/2021, 10.17635/lancaster/researchdata/496

    Dataset

  4. Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

    Delli, E. (Creator), Hodgson, P. (Creator), Repiso Menendez, E. (Creator), Craig, A. (Creator), Hayton, J. (Creator), Lu, Q. (Creator), Marshall, A. (Creator), Krier, A. (Creator), Carrington, P. (Creator), Lancaster University, 11/04/2019, 10.17635/lancaster/researchdata/282

    Dataset

  5. Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

    Delli, E. (Creator), Letka, V. (Creator), Hodgson, P. (Creator), Repiso Menendez, E. (Creator), Hayton, J. (Creator), Craig, A. (Creator), Lu, Q. (Creator), Beanland, R. (Creator), Krier, A. (Creator), Marshall, A. (Creator), Carrington, P. (Creator), Lancaster University, 22/01/2019, 10.17635/lancaster/researchdata/257

    Dataset

  6. Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

    Delli, E. (Creator), Hodgson, P. (Creator), Bentley, M. (Creator), Repiso Menendez, E. (Creator), Craig, A. (Creator), Lu, Q. (Creator), Beanland, R. (Creator), Marshall, A. (Creator), Krier, A. (Creator), Carrington, P. (Creator), Lancaster University, 20/09/2020, 10.17635/lancaster/researchdata/388

    Dataset

  7. Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

    Hodgson, P. (Creator), Carrington, P. (Creator), Lancaster University, 4/03/2020, 10.17635/lancaster/researchdata/351

    Dataset

  8. Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

    Hodgson, P. (Creator), Carrington, P. (Creator), Lancaster University, 23/08/2018, 10.17635/lancaster/researchdata/238

    Dataset

  9. ULTRARAM™: towards the development of a III-V semiconductor, non-volatile, random-access memory

    Lane, D. (Creator), Hayne, M. (Creator), Hodgson, P. (Creator), Lancaster University, 2021, 10.17635/lancaster/researchdata/420

    Dataset

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