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Dr Peter Hodgson

Senior Research Associate

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  1. 2019
  2. Published

    Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

    Delli, E., Letka, V., Hodgson, P. D., Repiso Menendez, E., Hayton, J., Craig, A. P., Lu, Q., Beanland, R., Krier, A., Marshall, A. R. J. & Carrington, P. J., 20/02/2019, In: ACS Photonics. 6, 2, p. 538–544 7 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. 2018
  4. Published

    Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

    Hodgson, P. D., Bentley, M., Delli, E., Beanland, R., Wagener, M. C., Botha, J. R. & Carrington, P. J., 14/11/2018, In: Semiconductor Science and Technology. 33, 12, 6 p., 125021.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Coupling in type II GaSb/GaAs quantum ring solar cells

    Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.

    Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

  6. 2017
  7. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  8. 2016
  9. Published

    Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

    Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. 2015
  12. Published

    Efficient optical coupling to semiconductor quantum dots, using tunable microfluidically-formed solid immersion lenses

    Woodhead, C., Hodgson, P., Young, M., Roberts, J., Noori, Y., Hayne, M. & Young, R., 1/07/2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Abstract

  13. 2014
  14. Published

    Hydrogenation of GaSb/GaAs quantum rings

    Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.

    Research output: Contribution to Journal/Magazine › Journal article

  15. 2013
  16. Published

    Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

    Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

    Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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