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Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
}
TY - GEN
T1 - Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates
AU - Carrington, P. J.
AU - Delli, E.
AU - Hodgson, P. D.
AU - Repiso, E.
AU - Craig, A.
AU - Marshall, A.
AU - Krier, A.
N1 - ©2017 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
PY - 2017/11/20
Y1 - 2017/11/20
N2 - III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.
AB - III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.
KW - GaSb
KW - Mid-infrared
KW - Molecular Beam Epitaxy
U2 - 10.1109/IPCon.2017.8116118
DO - 10.1109/IPCon.2017.8116118
M3 - Conference contribution/Paper
AN - SCOPUS:85043525841
SP - 307
EP - 308
BT - 30th Annual Conference of the IEEE Photonics Society, IPC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 30th Annual Conference of the IEEE Photonics Society, IPC 2017
Y2 - 1 October 2017 through 5 October 2017
ER -