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Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

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Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer. / Hayton, Jonathan Paul; Marshall, Andrew Robert Julian; Thompson, Michael Dermot et al.
In: AIMS Materials Science, Vol. 2, No. 2, 19.05.2015, p. 86-96.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hayton, JP, Marshall, ARJ, Thompson, MD & Krier, A 2015, 'Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer', AIMS Materials Science, vol. 2, no. 2, pp. 86-96. https://doi.org/10.3934/matersci.2015.2.86

APA

Hayton, J. P., Marshall, A. R. J., Thompson, M. D., & Krier, A. (2015). Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer. AIMS Materials Science, 2(2), 86-96. https://doi.org/10.3934/matersci.2015.2.86

Vancouver

Hayton JP, Marshall ARJ, Thompson MD, Krier A. Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer. AIMS Materials Science. 2015 May 19;2(2):86-96. doi: 10.3934/matersci.2015.2.86

Author

Hayton, Jonathan Paul ; Marshall, Andrew Robert Julian ; Thompson, Michael Dermot et al. / Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer. In: AIMS Materials Science. 2015 ; Vol. 2, No. 2. pp. 86-96.

Bibtex

@article{3647d162275f45da86712ad0e94aa432,
title = "Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer",
abstract = "GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates.",
keywords = "photoluminescence , IMF, Interfacial Misfit Array, GaSb, AlGaSb, InGaSb, Quantum Well, MQW ",
author = "Hayton, {Jonathan Paul} and Marshall, {Andrew Robert Julian} and Thompson, {Michael Dermot} and Anthony Krier",
year = "2015",
month = may,
day = "19",
doi = "10.3934/matersci.2015.2.86",
language = "English",
volume = "2",
pages = "86--96",
journal = "AIMS Materials Science",
issn = "2372-0484",
publisher = "AIMS Press",
number = "2",

}

RIS

TY - JOUR

T1 - Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

AU - Hayton, Jonathan Paul

AU - Marshall, Andrew Robert Julian

AU - Thompson, Michael Dermot

AU - Krier, Anthony

PY - 2015/5/19

Y1 - 2015/5/19

N2 - GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates.

AB - GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates.

KW - photoluminescence

KW - IMF

KW - Interfacial Misfit Array

KW - GaSb

KW - AlGaSb

KW - InGaSb

KW - Quantum Well

KW - MQW

U2 - 10.3934/matersci.2015.2.86

DO - 10.3934/matersci.2015.2.86

M3 - Journal article

VL - 2

SP - 86

EP - 96

JO - AIMS Materials Science

JF - AIMS Materials Science

SN - 2372-0484

IS - 2

ER -