Rights statement: Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 119 (10), 2016 and may be found at http://scitation.aip.org/content/aip/journal/jap/119/10/10.1063/1.4943179
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Rights statement: Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 119 (10), 2016 and may be found at http://scitation.aip.org/content/aip/journal/jap/119/10/10.1063/1.4943179
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Available under license: CC BY: Creative Commons Attribution 4.0 International License
Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy
AU - Debnath, A.
AU - Gandhi, J. S.
AU - Kesaria, Manoj
AU - Pillai, R.
AU - Starikov, D.
AU - Bensaoula, A.
N1 - Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 119 (10), 2016 and may be found at http://scitation.aip.org/content/aip/journal/jap/119/10/10.1063/1.4943179
PY - 2016/3/14
Y1 - 2016/3/14
N2 - The self-induced growth of GaN nanocolumns (NCs) on SixN1−x/Si (111) is investigated as a function of the ratio of molecular to atomic nitrogen species generated via plasma assisted molecular beam epitaxy. Relative concentrations of the molecular and atomic species are calculated using optical emission spectroscopy. The growth rate (GR), diameter, and density of NCs are found to vary with the molecular to atomic nitrogen species relative abundance ratio within the plasma cavity. With increasing ratio, the GR and diameter of NCs increase while the density of NCs seems to be decreasing. The morphologies and the coalescence of GaN NCs exhibit a trend for molecular/atomic ratios up to 11, beyond which they still change but at a lower rate. The detrimental effect of taperedness of the NCs decreases with increasing molecular/atomic ratios. This is possibly because of reduction in radial growth in NCs due to increase in diffusivity of nitrogen species with increasing ratios.
AB - The self-induced growth of GaN nanocolumns (NCs) on SixN1−x/Si (111) is investigated as a function of the ratio of molecular to atomic nitrogen species generated via plasma assisted molecular beam epitaxy. Relative concentrations of the molecular and atomic species are calculated using optical emission spectroscopy. The growth rate (GR), diameter, and density of NCs are found to vary with the molecular to atomic nitrogen species relative abundance ratio within the plasma cavity. With increasing ratio, the GR and diameter of NCs increase while the density of NCs seems to be decreasing. The morphologies and the coalescence of GaN NCs exhibit a trend for molecular/atomic ratios up to 11, beyond which they still change but at a lower rate. The detrimental effect of taperedness of the NCs decreases with increasing molecular/atomic ratios. This is possibly because of reduction in radial growth in NCs due to increase in diffusivity of nitrogen species with increasing ratios.
U2 - 10.1063/1.4943179
DO - 10.1063/1.4943179
M3 - Journal article
VL - 119
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 10
M1 - 104302
ER -