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    Rights statement: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 104, 2014 and may be found at http://scitation.aip.org/content/aip/journal/apl/104/21/10.1063/1.4879848

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Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays. / Craig, Adam; Reyner, Charles J.; Marshall, Andrew et al.
In: Applied Physics Letters, Vol. 104, 213502, 28.05.2014.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Craig, A, Reyner, CJ, Marshall, A & Huffaker, DL 2014, 'Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays', Applied Physics Letters, vol. 104, 213502. https://doi.org/10.1063/1.4879848

APA

Craig, A., Reyner, C. J., Marshall, A., & Huffaker, D. L. (2014). Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays. Applied Physics Letters, 104, Article 213502. https://doi.org/10.1063/1.4879848

Vancouver

Craig A, Reyner CJ, Marshall A, Huffaker DL. Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays. Applied Physics Letters. 2014 May 28;104:213502. doi: 10.1063/1.4879848

Author

Craig, Adam ; Reyner, Charles J. ; Marshall, Andrew et al. / Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays. In: Applied Physics Letters. 2014 ; Vol. 104.

Bibtex

@article{e154ca05a786464798c6c33102ba46e5,
title = "Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays",
abstract = "Interfacial misfit arrays were embedded within two avalanche photodiode (APD) structures. This allowed GaSb absorption layers to be combined with wide-bandgap multiplication regions, consisting of GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents the simplest case. The Al0.8Ga0.2As APD shows reduced dark currents of 5.07 μAcm−2 at 90% of the breakdown voltage, and values for effective below 0.2. Random-path-length modeled excess noise is compared with experimental data, for both samples. The designs could be developed further, allowing operation to be extended to longer wavelengths, using other established absorber materials which are lattice matched to GaSb.",
author = "Adam Craig and Reyner, {Charles J.} and Andrew Marshall and Huffaker, {Diana L.}",
note = "Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 104, 2014 and may be found at http://scitation.aip.org/content/aip/journal/apl/104/21/10.1063/1.4879848",
year = "2014",
month = may,
day = "28",
doi = "10.1063/1.4879848",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",

}

RIS

TY - JOUR

T1 - Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

AU - Craig, Adam

AU - Reyner, Charles J.

AU - Marshall, Andrew

AU - Huffaker, Diana L.

N1 - Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 104, 2014 and may be found at http://scitation.aip.org/content/aip/journal/apl/104/21/10.1063/1.4879848

PY - 2014/5/28

Y1 - 2014/5/28

N2 - Interfacial misfit arrays were embedded within two avalanche photodiode (APD) structures. This allowed GaSb absorption layers to be combined with wide-bandgap multiplication regions, consisting of GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents the simplest case. The Al0.8Ga0.2As APD shows reduced dark currents of 5.07 μAcm−2 at 90% of the breakdown voltage, and values for effective below 0.2. Random-path-length modeled excess noise is compared with experimental data, for both samples. The designs could be developed further, allowing operation to be extended to longer wavelengths, using other established absorber materials which are lattice matched to GaSb.

AB - Interfacial misfit arrays were embedded within two avalanche photodiode (APD) structures. This allowed GaSb absorption layers to be combined with wide-bandgap multiplication regions, consisting of GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents the simplest case. The Al0.8Ga0.2As APD shows reduced dark currents of 5.07 μAcm−2 at 90% of the breakdown voltage, and values for effective below 0.2. Random-path-length modeled excess noise is compared with experimental data, for both samples. The designs could be developed further, allowing operation to be extended to longer wavelengths, using other established absorber materials which are lattice matched to GaSb.

U2 - 10.1063/1.4879848

DO - 10.1063/1.4879848

M3 - Journal article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 213502

ER -