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InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared

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InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared. / Craig, Adam; Marshall, Andrew; Letka, Veronica et al.
In: Applied Physics Letters, Vol. 118, No. 25, 251103, 21.06.2021.

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Craig A, Marshall A, Letka V, Carmichael M, Golding T. InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared. Applied Physics Letters. 2021 Jun 21;118(25):251103. doi: 10.1063/5.0051049

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@article{ff29f75b90214b60a8d11df86553b1e8,
title = "InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared",
abstract = "III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.",
author = "Adam Craig and Andrew Marshall and Veronica Letka and Mark Carmichael and Terry Golding",
year = "2021",
month = jun,
day = "21",
doi = "10.1063/5.0051049",
language = "English",
volume = "118",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "25",

}

RIS

TY - JOUR

T1 - InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared

AU - Craig, Adam

AU - Marshall, Andrew

AU - Letka, Veronica

AU - Carmichael, Mark

AU - Golding, Terry

PY - 2021/6/21

Y1 - 2021/6/21

N2 - III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.

AB - III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.

U2 - 10.1063/5.0051049

DO - 10.1063/5.0051049

M3 - Journal article

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 251103

ER -