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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared
AU - Craig, Adam
AU - Marshall, Andrew
AU - Letka, Veronica
AU - Carmichael, Mark
AU - Golding, Terry
PY - 2021/6/21
Y1 - 2021/6/21
N2 - III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.
AB - III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.
U2 - 10.1063/5.0051049
DO - 10.1063/5.0051049
M3 - Journal article
VL - 118
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 251103
ER -