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InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

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InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. / Lu, Qi; Zhuang, Qiandong; Marshall, Andrew et al.

In: Semiconductor Science and Technology, Vol. 29, No. 7, 075011 , 12.05.2014.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Lu Q, Zhuang Q, Marshall A, Kesaria M, Beanland R, Krier A. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology. 2014 May 12;29(7):075011 . doi: 10.1088/0268-1242/29/7/075011

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@article{a9830b3803024536b200fef2b006a85f,
title = "InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers",
abstract = "Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb QDs was observed from each of the samples and was found to be comparable to the PL of InSb QDs grown onto homo-epitaxially deposited InAs. The 4 K PL intensity and linewidth of InSb QDs grown onto a 3 µm thick InAs buffer layer directly deposited onto GaAs proved to be superior to that from QDs grown onto an InAs MBL using either AlSb or GaSb interlayers. Light-emitting diode structures containing ten layers of InSb QD in the active region were subsequently fabricated and electroluminescence from the QDs was obtained in the mid-infrared spectral range up to 180 K. This is the first step towards obtaining mid-infrared InSb QD light sources on GaAs substrates.",
author = "Qi Lu and Qiandong Zhuang and Andrew Marshall and Manoj Kesaria and Richard Beanland and Anthony Krier",
year = "2014",
month = may,
day = "12",
doi = "10.1088/0268-1242/29/7/075011",
language = "English",
volume = "29",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "7",

}

RIS

TY - JOUR

T1 - InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

AU - Lu, Qi

AU - Zhuang, Qiandong

AU - Marshall, Andrew

AU - Kesaria, Manoj

AU - Beanland, Richard

AU - Krier, Anthony

PY - 2014/5/12

Y1 - 2014/5/12

N2 - Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb QDs was observed from each of the samples and was found to be comparable to the PL of InSb QDs grown onto homo-epitaxially deposited InAs. The 4 K PL intensity and linewidth of InSb QDs grown onto a 3 µm thick InAs buffer layer directly deposited onto GaAs proved to be superior to that from QDs grown onto an InAs MBL using either AlSb or GaSb interlayers. Light-emitting diode structures containing ten layers of InSb QD in the active region were subsequently fabricated and electroluminescence from the QDs was obtained in the mid-infrared spectral range up to 180 K. This is the first step towards obtaining mid-infrared InSb QD light sources on GaAs substrates.

AB - Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb QDs was observed from each of the samples and was found to be comparable to the PL of InSb QDs grown onto homo-epitaxially deposited InAs. The 4 K PL intensity and linewidth of InSb QDs grown onto a 3 µm thick InAs buffer layer directly deposited onto GaAs proved to be superior to that from QDs grown onto an InAs MBL using either AlSb or GaSb interlayers. Light-emitting diode structures containing ten layers of InSb QD in the active region were subsequently fabricated and electroluminescence from the QDs was obtained in the mid-infrared spectral range up to 180 K. This is the first step towards obtaining mid-infrared InSb QD light sources on GaAs substrates.

U2 - 10.1088/0268-1242/29/7/075011

DO - 10.1088/0268-1242/29/7/075011

M3 - Journal article

VL - 29

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

M1 - 075011

ER -