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Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion. / Krier, Anthony; Yin, Min; Marshall, Andrew Robert Julian et al.
In: Journal of Electronic Materials, Vol. 45, No. 6, 06.2016, p. 2826-2830.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Yin, M, Marshall, ARJ & Krier, SE 2016, 'Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion', Journal of Electronic Materials, vol. 45, no. 6, pp. 2826-2830. https://doi.org/10.1007/s11664-016-4373-0

APA

Krier, A., Yin, M., Marshall, A. R. J., & Krier, S. E. (2016). Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion. Journal of Electronic Materials, 45(6), 2826-2830. https://doi.org/10.1007/s11664-016-4373-0

Vancouver

Krier A, Yin M, Marshall ARJ, Krier SE. Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion. Journal of Electronic Materials. 2016 Jun;45(6):2826-2830. Epub 2016 Feb 18. doi: 10.1007/s11664-016-4373-0

Author

Krier, Anthony ; Yin, Min ; Marshall, Andrew Robert Julian et al. / Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion. In: Journal of Electronic Materials. 2016 ; Vol. 45, No. 6. pp. 2826-2830.

Bibtex

@article{8967ad7adda9424d92ef46afede3dd12,
title = "Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion",
abstract = "The practical realization of thermophotovoltaic (TPV) cells, which can directly convert heat into electric power, is of considerable technological interest. However, most existing TPV cells require heat sources at temperatures of ∼1800°C. Here we report a low bandgap mid-infrared cell based on InAs and demonstrate TPV operation with heat sources at temperatures in the range 500–950°C. The maximum open circuit voltage (Voc) and short circuit current density (Jsc) were measured as 0.06 V and 0.89 A cm−2 for a blackbody temperature of 950°C and an incident power density of 720 mW cm−2 without antireflection coating or electrode optimisation. TPV operation was obtained with heat sources at temperatures as low as 500°C, which represents progress towards energy scavenging and waste heat recovery applications.",
author = "Anthony Krier and Min Yin and Marshall, {Andrew Robert Julian} and Krier, {Susan Elaine}",
year = "2016",
month = jun,
doi = "10.1007/s11664-016-4373-0",
language = "English",
volume = "45",
pages = "2826--2830",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

RIS

TY - JOUR

T1 - Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion

AU - Krier, Anthony

AU - Yin, Min

AU - Marshall, Andrew Robert Julian

AU - Krier, Susan Elaine

PY - 2016/6

Y1 - 2016/6

N2 - The practical realization of thermophotovoltaic (TPV) cells, which can directly convert heat into electric power, is of considerable technological interest. However, most existing TPV cells require heat sources at temperatures of ∼1800°C. Here we report a low bandgap mid-infrared cell based on InAs and demonstrate TPV operation with heat sources at temperatures in the range 500–950°C. The maximum open circuit voltage (Voc) and short circuit current density (Jsc) were measured as 0.06 V and 0.89 A cm−2 for a blackbody temperature of 950°C and an incident power density of 720 mW cm−2 without antireflection coating or electrode optimisation. TPV operation was obtained with heat sources at temperatures as low as 500°C, which represents progress towards energy scavenging and waste heat recovery applications.

AB - The practical realization of thermophotovoltaic (TPV) cells, which can directly convert heat into electric power, is of considerable technological interest. However, most existing TPV cells require heat sources at temperatures of ∼1800°C. Here we report a low bandgap mid-infrared cell based on InAs and demonstrate TPV operation with heat sources at temperatures in the range 500–950°C. The maximum open circuit voltage (Voc) and short circuit current density (Jsc) were measured as 0.06 V and 0.89 A cm−2 for a blackbody temperature of 950°C and an incident power density of 720 mW cm−2 without antireflection coating or electrode optimisation. TPV operation was obtained with heat sources at temperatures as low as 500°C, which represents progress towards energy scavenging and waste heat recovery applications.

U2 - 10.1007/s11664-016-4373-0

DO - 10.1007/s11664-016-4373-0

M3 - Journal article

VL - 45

SP - 2826

EP - 2830

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -