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Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications

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Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications. / Marko, Igor; Duffy, Dominic Andrew; Bentley, Matthew et al.
In: Journal of Physics D: Applied Physics, Vol. 58, No. 18, 185103, 28.03.2025.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Marko, I, Duffy, DA, Bentley, M, Marshall, ARJ, Rihani, S, Berry, G, Robertson, M, Rawsthorne, J, Carrington, PJ & Sweeney, S 2025, 'Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications', Journal of Physics D: Applied Physics, vol. 58, no. 18, 185103. https://doi.org/10.1088/1361-6463/adc272

APA

Marko, I., Duffy, D. A., Bentley, M., Marshall, A. R. J., Rihani, S., Berry, G., Robertson, M., Rawsthorne, J., Carrington, P. J., & Sweeney, S. (2025). Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications. Journal of Physics D: Applied Physics, 58(18), Article 185103. https://doi.org/10.1088/1361-6463/adc272

Vancouver

Marko I, Duffy DA, Bentley M, Marshall ARJ, Rihani S, Berry G et al. Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications. Journal of Physics D: Applied Physics. 2025 Mar 28;58(18):185103. doi: 10.1088/1361-6463/adc272

Author

Marko, Igor ; Duffy, Dominic Andrew ; Bentley, Matthew et al. / Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications. In: Journal of Physics D: Applied Physics. 2025 ; Vol. 58, No. 18.

Bibtex

@article{e5b41a66b0fc4e32a035eadee032e47d,
title = "Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications",
abstract = "We report on the key design factors for development of Type-II “W”-lasers for O-band (1260-1360 nm) applications. We investigated the effects of InGaAs and GaAsSb Quantum Well (QW) composition and thicknesses on the emission wavelength and recombination efficiency as well as of (Al,Ga)As barriers on optimum electrical and optical confinement. Photoluminescence tests structures and full device structures were fabricated and characterised. 1.25 µm emitting lasers were demonstrated with threshold current density, Jth values of 480±10 A/cm2 at 290 K, whereas 1.3 µm lasers showed an increased Jth value of 5.5-7 kA/cm2 at 290 K.The photoluminescence test structures exhibited a similar trend of decreasing intensity with increasing wavelength. Gain measurements of the 1.3µm device demonstrate reasonably low optical losses of 10-15 cm−1 and a threshold modal gain of ≈25 cm−1. ",
author = "Igor Marko and Duffy, {Dominic Andrew} and Matthew Bentley and Marshall, {Andrew R. J.} and Samir Rihani and Graham Berry and Michael Robertson and John Rawsthorne and Carrington, {Peter J} and Stephen Sweeney",
year = "2025",
month = mar,
day = "28",
doi = "10.1088/1361-6463/adc272",
language = "English",
volume = "58",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "18",

}

RIS

TY - JOUR

T1 - Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications

AU - Marko, Igor

AU - Duffy, Dominic Andrew

AU - Bentley, Matthew

AU - Marshall, Andrew R. J.

AU - Rihani, Samir

AU - Berry, Graham

AU - Robertson, Michael

AU - Rawsthorne, John

AU - Carrington, Peter J

AU - Sweeney, Stephen

PY - 2025/3/28

Y1 - 2025/3/28

N2 - We report on the key design factors for development of Type-II “W”-lasers for O-band (1260-1360 nm) applications. We investigated the effects of InGaAs and GaAsSb Quantum Well (QW) composition and thicknesses on the emission wavelength and recombination efficiency as well as of (Al,Ga)As barriers on optimum electrical and optical confinement. Photoluminescence tests structures and full device structures were fabricated and characterised. 1.25 µm emitting lasers were demonstrated with threshold current density, Jth values of 480±10 A/cm2 at 290 K, whereas 1.3 µm lasers showed an increased Jth value of 5.5-7 kA/cm2 at 290 K.The photoluminescence test structures exhibited a similar trend of decreasing intensity with increasing wavelength. Gain measurements of the 1.3µm device demonstrate reasonably low optical losses of 10-15 cm−1 and a threshold modal gain of ≈25 cm−1.

AB - We report on the key design factors for development of Type-II “W”-lasers for O-band (1260-1360 nm) applications. We investigated the effects of InGaAs and GaAsSb Quantum Well (QW) composition and thicknesses on the emission wavelength and recombination efficiency as well as of (Al,Ga)As barriers on optimum electrical and optical confinement. Photoluminescence tests structures and full device structures were fabricated and characterised. 1.25 µm emitting lasers were demonstrated with threshold current density, Jth values of 480±10 A/cm2 at 290 K, whereas 1.3 µm lasers showed an increased Jth value of 5.5-7 kA/cm2 at 290 K.The photoluminescence test structures exhibited a similar trend of decreasing intensity with increasing wavelength. Gain measurements of the 1.3µm device demonstrate reasonably low optical losses of 10-15 cm−1 and a threshold modal gain of ≈25 cm−1.

U2 - 10.1088/1361-6463/adc272

DO - 10.1088/1361-6463/adc272

M3 - Journal article

VL - 58

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 18

M1 - 185103

ER -