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Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing

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<mark>Journal publication date</mark>24/04/2023
<mark>Journal</mark>Optics Express
Issue number9
Number of pages9
Pages (from-to)14358-14366
Publication StatusPublished
Early online date17/04/23
<mark>Original language</mark>English


An InGaAsSb p-B-n structure has been designed and characterised for zero bias low power detection applications. Devices were grown by molecular beam epitaxy and fabricated into quasi-planar photodiodes with a 2.25 μm cut-off wavelength. Maximum responsivity was measured to be 1.05 A/W at 2.0 μm, achieved at zero bias. D* of 9.4×1010 Jones was determined from room temperature spectra of noise power measurements with calculated D* remaining >1×1010 Jones up to 380 K. With a view to simple miniaturised detection and measurement of low concentration biomarkers, optical powers down to 40 pW were detected, without temperature stabilisation or phase-sensitive detection, indicating the photodiode’s potential.