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Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing. / Hanks, Laura; Mamic, Katarina; Klos, Krzysztof et al.
In: Optics Express, Vol. 31, No. 9, 24.04.2023, p. 14358-14366.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hanks, L, Mamic, K, Klos, K, Bainbridge, A, Fletcher, J, Gilder, L, Tedstone, L, Castano, F & Marshall, A 2023, 'Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing', Optics Express, vol. 31, no. 9, pp. 14358-14366. https://doi.org/10.1364/OE.485631

APA

Hanks, L., Mamic, K., Klos, K., Bainbridge, A., Fletcher, J., Gilder, L., Tedstone, L., Castano, F., & Marshall, A. (2023). Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing. Optics Express, 31(9), 14358-14366. https://doi.org/10.1364/OE.485631

Vancouver

Hanks L, Mamic K, Klos K, Bainbridge A, Fletcher J, Gilder L et al. Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing. Optics Express. 2023 Apr 24;31(9):14358-14366. Epub 2023 Apr 17. doi: 10.1364/OE.485631

Author

Hanks, Laura ; Mamic, Katarina ; Klos, Krzysztof et al. / Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing. In: Optics Express. 2023 ; Vol. 31, No. 9. pp. 14358-14366.

Bibtex

@article{1b3baab893f940f6b71ad3d2b48aaf69,
title = "Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing",
abstract = "An InGaAsSb p-B-n structure has been designed and characterised for zero bias low power detection applications. Devices were grown by molecular beam epitaxy and fabricated into quasi-planar photodiodes with a 2.25 μm cut-off wavelength. Maximum responsivity was measured to be 1.05 A/W at 2.0 μm, achieved at zero bias. D* of 9.4×1010 Jones was determined from room temperature spectra of noise power measurements with calculated D* remaining >1×1010 Jones up to 380 K. With a view to simple miniaturised detection and measurement of low concentration biomarkers, optical powers down to 40 pW were detected, without temperature stabilisation or phase-sensitive detection, indicating the photodiode{\textquoteright}s potential. ",
author = "Laura Hanks and Katarina Mamic and Krzysztof Klos and Andrew Bainbridge and Joshua Fletcher and Lindsay Gilder and Lucy Tedstone and Fernando Castano and Andrew Marshall",
year = "2023",
month = apr,
day = "24",
doi = "10.1364/OE.485631",
language = "English",
volume = "31",
pages = "14358--14366",
journal = "Optics Express",
issn = "1094-4087",
publisher = "Optical Society of American (OSA)",
number = "9",

}

RIS

TY - JOUR

T1 - Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing

AU - Hanks, Laura

AU - Mamic, Katarina

AU - Klos, Krzysztof

AU - Bainbridge, Andrew

AU - Fletcher, Joshua

AU - Gilder, Lindsay

AU - Tedstone, Lucy

AU - Castano, Fernando

AU - Marshall, Andrew

PY - 2023/4/24

Y1 - 2023/4/24

N2 - An InGaAsSb p-B-n structure has been designed and characterised for zero bias low power detection applications. Devices were grown by molecular beam epitaxy and fabricated into quasi-planar photodiodes with a 2.25 μm cut-off wavelength. Maximum responsivity was measured to be 1.05 A/W at 2.0 μm, achieved at zero bias. D* of 9.4×1010 Jones was determined from room temperature spectra of noise power measurements with calculated D* remaining >1×1010 Jones up to 380 K. With a view to simple miniaturised detection and measurement of low concentration biomarkers, optical powers down to 40 pW were detected, without temperature stabilisation or phase-sensitive detection, indicating the photodiode’s potential.

AB - An InGaAsSb p-B-n structure has been designed and characterised for zero bias low power detection applications. Devices were grown by molecular beam epitaxy and fabricated into quasi-planar photodiodes with a 2.25 μm cut-off wavelength. Maximum responsivity was measured to be 1.05 A/W at 2.0 μm, achieved at zero bias. D* of 9.4×1010 Jones was determined from room temperature spectra of noise power measurements with calculated D* remaining >1×1010 Jones up to 380 K. With a view to simple miniaturised detection and measurement of low concentration biomarkers, optical powers down to 40 pW were detected, without temperature stabilisation or phase-sensitive detection, indicating the photodiode’s potential.

U2 - 10.1364/OE.485631

DO - 10.1364/OE.485631

M3 - Journal article

VL - 31

SP - 14358

EP - 14366

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 9

ER -