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Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

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Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared. / Craig, A.P.; Al-Saymari, F.; Jain, M. et al.
In: Applied Physics Letters, Vol. 114, No. 15, 151107, 15.04.2019.

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Craig AP, Al-Saymari F, Jain M, Bainbridge A, Savich GR, Golding T et al. Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared. Applied Physics Letters. 2019 Apr 15;114(15):151107. doi: 10.1063/1.5082895

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Craig, A.P. ; Al-Saymari, F. ; Jain, M. et al. / Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared. In: Applied Physics Letters. 2019 ; Vol. 114, No. 15.

Bibtex

@article{cc260d00a36345c58a8bea23c19577a2,
title = "Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared",
abstract = "We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 × 10 10 and 1 × 10 10 cm Hz 1 / 2 W - 1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene. ",
author = "A.P. Craig and F. Al-Saymari and M. Jain and A. Bainbridge and G.R. Savich and T. Golding and A. Krier and G.W. Wicks and A.R. Marshall",
year = "2019",
month = apr,
day = "15",
doi = "10.1063/1.5082895",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "15",

}

RIS

TY - JOUR

T1 - Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

AU - Craig, A.P.

AU - Al-Saymari, F.

AU - Jain, M.

AU - Bainbridge, A.

AU - Savich, G.R.

AU - Golding, T.

AU - Krier, A.

AU - Wicks, G.W.

AU - Marshall, A.R.

PY - 2019/4/15

Y1 - 2019/4/15

N2 - We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 × 10 10 and 1 × 10 10 cm Hz 1 / 2 W - 1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene.

AB - We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 × 10 10 and 1 × 10 10 cm Hz 1 / 2 W - 1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene.

U2 - 10.1063/1.5082895

DO - 10.1063/1.5082895

M3 - Journal article

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 151107

ER -