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Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

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Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. / Di Paola, D. M.; Kesaria, Manoj; Makarovsky, Oleg et al.

In: Scientific Reports, Vol. 6, 32039, 18.08.2016.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Di Paola, DM, Kesaria, M, Makarovsky, O, Velichko, AV, Eaves, L, Mori, N, Krier, A & Patane, A 2016, 'Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode', Scientific Reports, vol. 6, 32039. https://doi.org/10.1038/srep32039

APA

Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A. V., Eaves, L., Mori, N., Krier, A., & Patane, A. (2016). Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports, 6, [32039]. https://doi.org/10.1038/srep32039

Vancouver

Di Paola DM, Kesaria M, Makarovsky O, Velichko AV, Eaves L, Mori N et al. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports. 2016 Aug 18;6:32039. doi: 10.1038/srep32039

Author

Di Paola, D. M. ; Kesaria, Manoj ; Makarovsky, Oleg et al. / Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. In: Scientific Reports. 2016 ; Vol. 6.

Bibtex

@article{84a239eba88f430393d0711decc416b1,
title = "Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode",
abstract = "Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.",
author = "{Di Paola}, {D. M.} and Manoj Kesaria and Oleg Makarovsky and Velichko, {A. V.} and L Eaves and N. Mori and Anthony Krier and A. Patane",
year = "2016",
month = aug,
day = "18",
doi = "10.1038/srep32039",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

AU - Di Paola, D. M.

AU - Kesaria, Manoj

AU - Makarovsky, Oleg

AU - Velichko, A. V.

AU - Eaves, L

AU - Mori, N.

AU - Krier, Anthony

AU - Patane, A.

PY - 2016/8/18

Y1 - 2016/8/18

N2 - Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.

AB - Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as “stepping stones” for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.

U2 - 10.1038/srep32039

DO - 10.1038/srep32039

M3 - Journal article

VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 32039

ER -