Anthony Krier - Publications & Outputs - Research Portal

Professor Anthony Krier

Emeritus Professor

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Published
Modelling of InAs thin layer growth from the liquid phase. .
Krier, A. & Labadi, Z., 06/2000, In: IEE Proceedings - Optoelectronics. 147, 3, p. 222-224 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Powerful interface light emitting diodes for methane gas detection. .
Krier, A. & Sherstnev, V. V., 21/01/2000, In: Journal of Physics D: Applied Physics. 33, 2, p. 101-106 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
LEDs for formaldehyde detection at 3.6 mu m. .
Krier, A. & Sherstnev, V. V., 7/02/2001, In: Journal of Physics D: Applied Physics. 34, 3, p. 428-432 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
A novel LED module for the detection of H2S at 3.8 mu m. .
Krier, A., Sherstnev, V. V. & Gao, H. H., 21/07/2000, In: Journal of Physics D: Applied Physics. 33, 14, p. 1656-1661 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Optical switching in midinfrared light-emitting diodes .
Krier, A., Sherstnev, V. V., Gao, H. H., Monakhov, A. M. & Hill, G., 22/04/2002, In: Applied Physics Letters. 80, 16, p. 2821-2823 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .
Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In: Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy
Krier, A. & Huang, X. L., 2002, Physics and Simulation of Optoelectronic Devices X. Blood, P., Osinski, M. & Arakawa, Y. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 70-78 9 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
InAsSbP quantum dots grown by liquid phase epitaxy
Krier, A., Labadi, Z. & Hammiche, A., 21/10/1999, In: Journal of Physics D: Applied Physics. 32, 20, p. 2587-2589 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering
Krier, A., Gao, H. H. & Sherstnev, V. V., 15/06/1999, In: Journal of Applied Physics. 85, 12, p. 8419-8422 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer
Krier, A., Chubb, D., Krier, S. E., Hopkinson, M. & Hill, G., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 292-296 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Rapid slider LPE growth of InAs quantum wells
Krier, A., Labadi, Z. & Richardson, J., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 297-301 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Development of dilute nitride materials for mid-infrared diode lasers
Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A. & Kudrawiec, R., 09/2012, In: Semiconductor Science and Technology. 27, 9, 8 p., 094009 .
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Antimonide quantum dot nanostructures for novel photonic device applications
Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J. R., Koenraad, P. M. & Smakman, E. P., 5/11/2013, The wonder of nanotechnology: quantum optoelectronic devices and applications . SPIE
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter (peer-reviewed) › peer-review
Published
Low bandgap mid-infrared thermophotovoltaic arrays based on InAs
Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In: Infrared Physics and Technology. 73, p. 126-129 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs-based dilute nitride materials and devices for the mid-infrared spectral range
Krier, A., De La Mare, M., Zhuang, Q., Carrington, P. J. & Patane, A., 4/02/2013, In: Proceedings of SPIE. 8631, 86311Q.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion
Krier, A., Yin, M., Marshall, A. R. J. & Krier, S. E., 06/2016, In: Journal of Electronic Materials. 45, 6, p. 2826-2830 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Mid-infrared Light Emitting Diodes
Krier, A., Repiso Menendez, E., Al-Saymari, F., Carrington, P., Marshall, A., Lu, Q., Krier, S., Lulla Ramrakhiyani, K., Steer, M., MacGregor, C., Broderick, C., Arkani, R., O'Reilly, E., Sorel, M., Molina, S. & de la Mata, M., 18/10/2019, Mid-infrared Optoelectronics Materials, Devices, and Applications. Tournié, E. & Cerutti, L. (eds.). Elsevier
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.
Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 14/04/2009, In: Applied Physics Letters. 94, 15, p. 151902
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys
Kudrawiec, R., Latkowska, M., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 2011, In: Applied Physics Letters. 99, 1, 3 p., 011904.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys
Latkowska, M., Baranowski, M., Linhart, W. M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A. & Kudrawiec, R., 11/02/2016, In: Journal of Physics D: Applied Physics. 49, 11, 7 p., 115105.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .
Liu, P. W., Tsai, G., Lin, H. H., Krier, A., Zhuang, Q. D. & Stone, M, M., 13/11/2006, In: Applied Physics Letters. 89, 20, p. 201115
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers
Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers
Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C
Lu, Q., Zhou, X., Krysa, A., Marshall, A., Carrington, P., Tan, C-H. & Krier, A., 1/06/2018, In: Solar Energy Materials and Solar Cells. 179, p. 334-338 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
Lu, Q., Montesdeoca Cardenes, D., Carrington, P. J., Marshall, A. R. J., Krier, A. & Beanland, R., 1/03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 406-412 7 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications
Lu, Q., Marshall, A. & Krier, A., 29/05/2019, In: Materials. 12, 11, 8 p., 1743.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency
Lu, Q., Krier, A., Zhou, Y., Cai, X., Xu, Z., Chen, J. & He, L., 27/06/2019, In: Applied Physics Letters. 114, 25, 5 p., 253507.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Mid-infrared interband cascade light-emitting diodes with InAs/GaAßb superlattices on InAs substrates: Smart Photonic and Optoelectronic Integrated Circuits XXII 2020
Lu, Q., Zhou, Y., Chen, J., He, L., Krier, A., S., H. (ed.), L., V. (ed.) & (SPIE), T. S. O. P-O. I. E., 1/02/2020.
Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
Published
Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A., 31/07/2013, In: Journal of Physics D: Applied Physics. 46, 30, 6 p., 305104.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.
Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R., 1/02/2010, In: Applied Physics Letters. 96, 5, p. 052115
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .
Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 08/2004, In: Journal of Electronic Materials. 33, 8, p. 867-872 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.
Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P., 7/04/2002, In: Journal of Physics D: Applied Physics. 35, 7, p. 631-636 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .
Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface luminescence and lasing at a type II single broken-gap heterojunction
Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2003, 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Alferov, ZI. & Esaki, L. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 340-342 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Mid-infrared lasers operating on a single quantum well at the type II heterointerface
Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2001, LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS. New York: IEEE, Vol. 2. p. 534-535 2 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .
Monakhov, A., Krier, A. & Sherstnev, V. V., 03/2004, In: Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure
Montesdeoca Cardenes, D., Carrington, P. J., Marko, I. P., Wagener, M. C., Sweeney, S. J. & Krier, A., 1/12/2018, In: Solar Energy Materials and Solar Cells. 187, 1, p. 227-232 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Coupling in type II GaSb/GaAs quantum ring solar cells
Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.
Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
Published
Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.
Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 5/03/2009, In: Applied Physics Letters. 94, 9, p. 091111
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .
Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M. T. & Ashley, T., 24/09/2007, In: Applied Physics Letters. 91, 13, p. 131118
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 2009, Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York: IEEE, p. 2813-2814 2 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 1/12/2009, Conference on Lasers and Electro-Optics, CLEO 2009.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 1/01/2009, International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA)
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 16/11/2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 5226114
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Structural modifications of InAs based materials for mid-infrared optoelectronic devices
Nohavica, D. & Krier, A., 2004, ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Osvald, J. & Hascik, S. (eds.). New York: IEEE, p. 203-206 4 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Mode behavior in InAs midinfrared whispering gallery lasers.
Norris, G., Krier, A., Sherstnev, V. V., Monakhov, A. & Baranov, A., 1/01/2007, In: Applied Physics Letters. 90, 1, p. 011105
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electron coherence length and mobility in highly mismatched III-N-V alloys.
Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M. & Hill, G., 23/12/2008, In: Applied Physics Letters. 93, 25, p. 252106
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.
Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q. D., Helm, M., Goiran, M. & Hill, G., 16/09/2009, In: Physical review B. 80, 11, p. 115207
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
FDTD modelling of mid infrared disk lasers
Pugh, J. R., Buss, I. J., Nash, G. R., AshleY, T., Krier, A., Cryan, M. J. & Rarity, J. G., 2007, ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4. Marciniak, M. (ed.). New York: IEEE, p. 208-211 4 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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Professor Anthony Krier

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