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Professor Anthony Krier

Emeritus Professor

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  1. Published

    Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

    Krier, A., Gao, H. H. & Sherstnev, V. V., 15/06/1999, In: Journal of Applied Physics. 85, 12, p. 8419-8422 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

    Cheetham, K. J., Krier, A., Patel, I. I., Martin, F. L., Tzeng, J-S., Wu, C-J., Lin, H-H. & EPSRC Studentship for KJC (Funder), 2/03/2011, In: Journal of Physics D: Applied Physics. 44, 8, p. 085405

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

    Cheetham, K. J., Carrington, P. J., Krier, A., Patel, I. I. & Martin, F. L., 01/2012, In: Semiconductor Science and Technology. 27, 1, p. - 4 p., 015004.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Rapid slider LPE growth of InAs quantum wells

    Krier, A., Labadi, Z. & Richardson, J., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 297-301 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

    Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A., 31/07/2013, In: Journal of Physics D: Applied Physics. 46, 30, 6 p., 305104.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .

    Yin, M., Krier, A., Jones, R. & Carrington, P., 3/09/2007, In: Applied Physics Letters. 91, 10, 101104.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 μm

    Al-Saymari, F. A., Craig, A. P., Lu, Q., Hanks, L. A., Marshall, A. R. J. & Krier, A., 13/11/2023, In: Applied Physics Letters. 123, 20, 201103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

    Craig, A. P., Al-Saymari, F., Jain, M., Bainbridge, A., Savich, G. R., Golding, T., Krier, A., Wicks, G. W. & Marshall, A. R., 15/04/2019, In: Applied Physics Letters. 114, 15, 5 p., 151107.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Resonant Cavity–Enhanced Photodiodes for Spectroscopy of C-H Bonds

    Bainbridge, A., Craig, A., Al-Saymari, F., Krier, A. & Marshall, A., 30/09/2021, In: physica status solidi (a). 218, 17, 6 p., 2100056.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A. V., Eaves, L., Mori, N., Krier, A. & Patane, A., 18/08/2016, In: Scientific Reports. 6, 8 p., 32039.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. .

    Krier, A., Smirnov, V. M., Batty, P. J., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 21/05/2007, In: Applied Physics Letters. 90, 21, p. 211115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Krier, A. & Ivanov, S. V., 1/09/2008, In: Applied Physics Letters. 93, 9, p. 091101

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

    Alhodaib, A., Noori, Y., Carrington, P. J., Sanchez, A., Thompson, M. D., Young, R. J., Krier, A. & Marshall, A. R. J., 10/01/2018, In: Nano Letters. 18, 1, p. 235-240 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In: Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In: Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

    Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. & Patanè, A., 6/04/2020, In: Applied Physics Letters. 116, 14, 5 p., 142108.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 mu m. .

    Gao, H. H., Krier, A. & Sherstnev, V. V., 7/08/2000, In: Applied Physics Letters. 77, 6, p. 872-874 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 08/2004, In: Journal of Electronic Materials. 33, 8, p. 867-872 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution

    Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M. & Pingue, P., 2012, NSTI-Nanotech 2012. Santa Clara, USA: CRC PRESS-TAYLOR & FRANCIS GROUP, p. 24-26 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  20. Published

    Semiconductor WGM lasers for the mid-IR spectral range

    Sherstnev, V. V., Monakhov, A. M., Astakhova, A. P., Kislyakova, A. Y., Yakovlev, Y. P., Averkiev, N. S., Krier, A. & Hill, G., 09/2005, In: Semiconductors. 39, 9, p. 1087-1092 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. E-pub ahead of print

    Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 6/08/2013, (E-pub ahead of print) In: Applied Physics Letters. 103, 6, 4 p., 063902.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

    Bin Esro, M., Mazzocco, R., Vourlias, G., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  23. Published

    Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes

    Bin Esro, M., Georgakopoulos, S., Lu, H., Vourlias, G., Krier, A., Milne, W. I., Gillin, W. P. & Adamopoulos, G., 28/04/2016, In: Journal of Materials Chemistry C. 4, 16, p. 3563-3570 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    Strain enhancement during annealing of GaAsN alloys.

    Zhuang, Q. D., Krier, A. & Stanley, C. R., 15/05/2007, In: Journal of Applied Physics. 101, 10, p. 103536

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.

    Ibanez, J., Oliva, R., de la Mare, M., Schmidbauer, M., Hernandez, S., Pellegrino, P., Scurr, D. J., Cusco, R., Artus, L., Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A. M. R., Krier, A., Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder) & EPRSC (UK) (Funder), 11/2010, In: Journal of Applied Physics. 108, 10, p. 103504

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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