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Dr Manoj Kesaria

Formerly at Lancaster University

  1. Journal article
  2. Published

    A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE

    Anyebe, E. A., Kesaria, M., Sanchez, A. M. & Zhuang, Q., 1/07/2020, In: Applied Physics A. 126, 6, 8 p., 427.

    Research output: Contribution to journalJournal articlepeer-review

  3. Published

    Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

    Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. & Patanè, A., 6/04/2020, In: Applied Physics Letters. 116, 14, 5 p., 142108.

    Research output: Contribution to journalJournal articlepeer-review

  4. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In: Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to journalJournal articlepeer-review

  5. Published

    InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

    Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In: Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.

    Research output: Contribution to journalJournal articlepeer-review

  6. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In: Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to journalJournal articlepeer-review

  7. Published

    Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A. V., Eaves, L., Mori, N., Krier, A. & Patane, A., 18/08/2016, In: Scientific Reports. 6, 8 p., 32039.

    Research output: Contribution to journalJournal articlepeer-review

  8. Published

    Effect of N2* and N on GaN nanocolumns grown on Si (111) by molecular beam epitaxy

    Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D. & Bensaoula, A., 14/03/2016, In: Journal of Applied Physics. 119, 10, 7 p., 104302.

    Research output: Contribution to journalJournal articlepeer-review

  9. Published

    Highly-mismatched InAs/InSe heterojunction diodes

    Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A., Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. & Patane, A., 2016, In: Applied Physics Letters. 109, 18, 4 p., 182115.

    Research output: Contribution to journalJournal articlepeer-review

  10. Published

    Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

    Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In: Infrared Physics and Technology. 73, p. 126-129 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  11. Published

    Peculiarities of the hydrogenated In(AsN) alloy

    Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A. & Capizzi, M., 14/09/2015, In: Semiconductor Science and Technology. 30, p. 105030 10 p.

    Research output: Contribution to journalJournal articlepeer-review

  12. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to journalJournal articlepeer-review

  13. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  14. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In: Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to journalJournal articlepeer-review

  15. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to journalJournal articlepeer-review

  16. Published

    Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

    Bhasker, H. P., Thakur, V., Kesaria, M., Shivaprasad, S. M. & Dhar, S., 2014, In: AIP Conference Proceedings. 1583, 252.

    Research output: Contribution to journalJournal articlepeer-review

  17. Published

    Characterization of structure and magnetism in Zn1-x(Co-x/Mn-x)O epitaxial thin films as a function of composition

    Negi, D. S., Loukya, B., Dileep, K., Kesaria, M., Kumar, N. & Dutta, R., 11/2013, In: Superlattices and Microstructures. 63, p. 289-297 9 p.

    Research output: Contribution to journalJournal articlepeer-review

  18. Published

    Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology

    Thakur, V., Kesaria, M. & Shivaprasad, S. M., 10/2013, In: Solid State Communications. 171, p. 8-13 6 p.

    Research output: Contribution to journalJournal articlepeer-review

  19. Published

    The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on cubic Si(001) surface

    Shetty, S., Kesaria, M., Ghatak, J. & Shivaprasad, S. M., 06/2013, In: Crystal Growth and Design. 13, 6, p. 2407-2412 6 p.

    Research output: Contribution to journalJournal articlepeer-review

  20. Published

    Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

    Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. & Shivaprasad, S. M., 24/09/2012, In: Applied Physics Letters. 101, 13, p. 131605-131608 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  21. Published

    High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

    Bhasker, H. P., Dhar, S., Kesaria, M., Sain, A. & Shivaprasad, S. M., 24/09/2012, In: Applied Physics Letters. 101, 13, p. 132109-132113 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  22. Published

    Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film

    Mitra, J., Abraham, G. J., Kesaria, M., Bahl, S., Gupta, A., Viswanadham, C. S., Kulkarni, U. D. & Dey, G. K., 01/2012, In: Materials Science Forum. 710, p. 757-761 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  23. Published

    Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

    Kesaria, M., Shetty, S., Cohen, P. I. & Shivaprasad, S. M., 11/2011, In: Materials Research Bulletin. 46, 11, p. 1811-1813 3 p.

    Research output: Contribution to journalJournal articlepeer-review

  24. Published

    Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3

    Kesaria, M. & Shivaprasad, S. M., 4/10/2011, In: Applied Physics Letters. 99, 14, 4 p., 143105.

    Research output: Contribution to journalJournal articlepeer-review

  25. Published

    Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 15/09/2011, In: Crystal Growth and Design. 11, 11, p. 4900-4903 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  26. Published

    Spontaneous formation of GaN nanostructures by molecular beam epitaxy

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 07/2011, In: Journal of Crystal Growth. 326, 1, p. 191-194 4 p.

    Research output: Contribution to journalJournal articlepeer-review

  27. Published

    Effect of Pb adatom flux rate on adlayer coverage for Stranski–Krastanov growth mode on Si(1 1 1)7 × 7 surface

    Kesaria, M., Kumar, M., Gupta, G. & Shivaprasad, S. M., 10/2009, In: Applied Surface Science. 256, p. 576-579 4 p.

    Research output: Contribution to journalJournal articlepeer-review

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