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Matthew Bentley

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Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers
Altayar, A. (Creator), Al-Saymari, F. (Creator), Repiso Menendez, E. (Creator), Hanks, L. (Creator), Craig, A. (Creator), Bentley, M. (Creator), Delli, E. (Creator), Carrington, P. (Creator), Krier, A. (Creator), Marshall, A. (Creator), Lancaster University, 13/03/2022, 10.17635/lancaster/researchdata/515
Dataset
Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon
Delli, E. (Creator), Hodgson, P. (Creator), Bentley, M. (Creator), Repiso Menendez, E. (Creator), Craig, A. (Creator), Lu, Q. (Creator), Beanland, R. (Creator), Marshall, A. (Creator), Krier, A. (Creator), Carrington, P. (Creator), Lancaster University, 20/09/2020, 10.17635/lancaster/researchdata/388
Dataset
Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy
Hodgson, P. (Creator), Carrington, P. (Creator), Lancaster University, 23/08/2018, 10.17635/lancaster/researchdata/238
Dataset
Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy
Hodgson, P. (Creator), Carrington, P. (Creator), Lancaster University, 4/03/2020, 10.17635/lancaster/researchdata/351
Dataset