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Research

Dr Matthew Bentley

Research Associate

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  1. 2025
  2. Published

    Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications

    Marko, I., Duffy, D. A., Bentley, M., Marshall, A. R. J., Rihani, S., Berry, G., Robertson, M., Rawsthorne, J., Carrington, P. J. & Sweeney, S., 28/03/2025, In: Journal of Physics D: Applied Physics. 58, 18, 185103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. 2024
  4. Published

    pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice

    Cao, P., Bentley, M., You, M., Wei, J., Peng, H., Wang, T., song, C., Zhuang, Q. & Zheng, W., 22/11/2024, In: Optics Letters. 49, 23, p. 6769-6772 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. 2022
  6. Published

    Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

    Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. 2021
  8. Published

    1.55μm Efficient Temperature Insensitive GaSb-based Lasers for Telecoms Applications

    Bentley, M., 2021, Lancaster University. 165 p.

    Research output: Thesis › Doctoral Thesis

  9. 2020
  10. E-pub ahead of print

    Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

    Delli, E., Hodgson, P., Bentley, M., Repiso Menendez, E., Craig, A., Lu, Q., Beanland, R., Marshall, A., Krier, A. & Carrington, P., 29/09/2020, (E-pub ahead of print) In: Applied Physics Letters. 117, 13, 6 p., 131103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  12. 2018
  13. Published

    Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

    Hodgson, P. D., Bentley, M., Delli, E., Beanland, R., Wagener, M. C., Botha, J. R. & Carrington, P. J., 14/11/2018, In: Semiconductor Science and Technology. 33, 12, 6 p., 125021.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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