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Research

Dr Peter Carrington

Senior Lecturer

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  1. Published

    Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

    Alhodaib, A., Noori, Y., Carrington, P. J., Sanchez, A., Thompson, M. D., Young, R. J., Krier, A. & Marshall, A. R. J., 10/01/2018, In: Nano Letters. 18, 1, p. 235-240 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Mid-infrared resonant cavity light emitting diodes operating at 4.5 μm

    Al-Saymari, F., Craig, A., Lu, Q., Marshall, A., Carrington, P. & Krier, A., 3/08/2020, In: Optics Express. 28, 16, p. 23338-23353 16 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

    Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Influence of a Bi surfactant on Sb incorporation in InAsSb alloys

    Anderson, E. M., Lundquist, A. M., Sarney, W. L., Svensson, S. P., Carrington, P. J., Pearson, C. & Millunchick, J. M., 1/07/2014, In: Journal of Applied Physics. 116, 1, 014901.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Krier, A. & Ivanov, S. V., 1/09/2008, In: Applied Physics Letters. 93, 9, p. 091101

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In: Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to Journal/Magazine › Journal article

  8. Published

    Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

    Carrington, P., de la Mare, M., Cheetham, K. J., Zhuang, Q. & Krier, A., 2011, In: Advances in OptoElectronics. 2011, n/a, 8 p., 145012.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A., 15/05/2012, In: Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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