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Dr Peter Carrington

Senior Lecturer

  1. Published

    Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

    de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A. & EPSRC Studentship for MDLM (Funder), 1/09/2010, In: Journal of Physics D: Applied Physics. 43, 34, p. 345103

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

    Cheetham, K. J., Carrington, P. J., Krier, A., Patel, I. I. & Martin, F. L., 01/2012, In: Semiconductor Science and Technology. 27, 1, p. - 4 p., 015004.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

    Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A., 31/07/2013, In: Journal of Physics D: Applied Physics. 46, 30, 6 p., 305104.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy. .

    Yin, M., Krier, A., Jones, R. & Carrington, P., 3/09/2007, In: Applied Physics Letters. 91, 10, 101104.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes.

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Krier, A. & Ivanov, S. V., 1/09/2008, In: Applied Physics Letters. 93, 9, p. 091101

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

    Alhodaib, A., Noori, Y., Carrington, P. J., Sanchez, A., Thompson, M. D., Young, R. J., Krier, A. & Marshall, A. R. J., 10/01/2018, In: Nano Letters. 18, 1, p. 235-240 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. E-pub ahead of print

    Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 6/08/2013, (E-pub ahead of print) In: Applied Physics Letters. 103, 6, 4 p., 063902.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In: physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A., 15/05/2012, In: Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  11. Published

    Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In: Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  12. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In: Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to Journal/MagazineJournal article

  13. Published

    ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

    Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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