Rights statement: This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal for Crystal Growth, 586, 126627, 2022 DOI: 10.1016/j.jcrysgro.2022.126627
Accepted author manuscript, 1.05 MB, PDF document
Available under license: CC BY-NC-ND: Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers
AU - Altayar, Abdullah
AU - Al-Saymari, Furat
AU - Repiso Menendez, Eva
AU - Hanks, Laura
AU - Craig, Adam
AU - Bentley, Matthew
AU - Delli, Evangelia
AU - Carrington, Peter
AU - Krier, Anthony
AU - Marshall, Andrew
N1 - This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal for Crystal Growth, 586, 126627, 2022 DOI: 10.1016/j.jcrysgro.2022.126627
PY - 2022/5/15
Y1 - 2022/5/15
N2 - Heteroepitaxy of mid-infrared Sb-based III-V semiconductor devices on highly mismatched wafers such as GaAs and silicon are a promising route towards high-density integration benefiting from the mature fabrication technology of these substrates. This work reports on the electrical performance of heteroepitaxially grown midinfrared InAs0.915Sb0.085/Al0.12In0.88As multi-quantum wells light emitting diodes on GaAs and offcut Si substrates using molecular beam epitaxy. Both devices exhibited a strong room temperature electroluminescence signal peaking at around 3.4 µm. Analysis of the output power results obtained from both devices revealed that the Si-based LED exhibited higher external quantum efficiency despite the higher defect density which is attributed to the superior thermal properties of the Si wafer.
AB - Heteroepitaxy of mid-infrared Sb-based III-V semiconductor devices on highly mismatched wafers such as GaAs and silicon are a promising route towards high-density integration benefiting from the mature fabrication technology of these substrates. This work reports on the electrical performance of heteroepitaxially grown midinfrared InAs0.915Sb0.085/Al0.12In0.88As multi-quantum wells light emitting diodes on GaAs and offcut Si substrates using molecular beam epitaxy. Both devices exhibited a strong room temperature electroluminescence signal peaking at around 3.4 µm. Analysis of the output power results obtained from both devices revealed that the Si-based LED exhibited higher external quantum efficiency despite the higher defect density which is attributed to the superior thermal properties of the Si wafer.
KW - A3. Molecular Beam Epitaxy
KW - B3. Infrared Devices
KW - B3. Light Emitting Diodes
KW - B2. Semiconducting III-V materials
KW - B1. Antimonides
KW - A3. Quantum wells
U2 - 10.1016/j.jcrysgro.2022.126627
DO - 10.1016/j.jcrysgro.2022.126627
M3 - Journal article
VL - 586
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 126627
ER -