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Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

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Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon. / Carrington, Peter; Delli, Evangelia; Letka, Veronica et al.
Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. Vol. 11503 SPIE--The International Society for Optical Engineering, 2020.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

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Carrington P, Delli E, Letka V, Bentley M, Hodgson P, Repiso Menendez E et al. Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon. In Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. Vol. 11503. SPIE--The International Society for Optical Engineering. 2020 doi: 10.1117/12.2568741

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Carrington, Peter ; Delli, Evangelia ; Letka, Veronica et al. / Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon. Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. Vol. 11503 SPIE--The International Society for Optical Engineering, 2020.

Bibtex

@inproceedings{fdbdadae01f242b79608e9e18e5486af,
title = "Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon",
abstract = "GaSb-based materials can be used to produce high performance photonic devices operating in the technologically important mid-infrared spectral range. Direct epitaxial growth of GaSb on silicon (Si) is an attractive method to reduce manufacturing costs and opens the possibility of new applications, such as lab-on-a-chip MIR photonic integrated circuits and monolithic integration of focal plane arrays (FPAs) with Si readout integrated circuits (ROICs). However, fundamental material dissimilarities, such as the large lattice mismatch, polar-nonpolar character of the III-V/Si interface and differences in thermal expansion coefficients lead to the formation of threading dislocations and antiphase domains, which effect the device performance. This work reports on the molecular beam epitaxial growth of high quality GaSb-based materials and devices onto Si. This was achieved using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step GaSb growth temperature procedure and a series of dislocation filter superlattices, resulting in a low defect density, anti-phase domain free GaSb buffer layer on Si. A nBn barrier photodetector based on a type-II InAs/InAsSb superlattice was grown on top of the buffer layer. The device exhibited an extended 50 % cut-off wavelength at 5.40 μm at 200 K which moved to 5.9 μm at 300 K. A specific detectivity of 1.5 x1010 Jones was measured, corresponding in an external quantum efficiency of 25.6 % at 200 K.",
author = "Peter Carrington and Evangelia Delli and Veronica Letka and Matthew Bentley and Peter Hodgson and {Repiso Menendez}, Eva and Jonathan Hayton and Adam Craig and Qi Lu and Richard Beanland and Anthony Krier and Andrew Marshall",
year = "2020",
month = aug,
day = "24",
doi = "10.1117/12.2568741",
language = "English",
volume = "11503",
booktitle = "Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X",
publisher = "SPIE--The International Society for Optical Engineering",

}

RIS

TY - GEN

T1 - Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

AU - Carrington, Peter

AU - Delli, Evangelia

AU - Letka, Veronica

AU - Bentley, Matthew

AU - Hodgson, Peter

AU - Repiso Menendez, Eva

AU - Hayton, Jonathan

AU - Craig, Adam

AU - Lu, Qi

AU - Beanland, Richard

AU - Krier, Anthony

AU - Marshall, Andrew

PY - 2020/8/24

Y1 - 2020/8/24

N2 - GaSb-based materials can be used to produce high performance photonic devices operating in the technologically important mid-infrared spectral range. Direct epitaxial growth of GaSb on silicon (Si) is an attractive method to reduce manufacturing costs and opens the possibility of new applications, such as lab-on-a-chip MIR photonic integrated circuits and monolithic integration of focal plane arrays (FPAs) with Si readout integrated circuits (ROICs). However, fundamental material dissimilarities, such as the large lattice mismatch, polar-nonpolar character of the III-V/Si interface and differences in thermal expansion coefficients lead to the formation of threading dislocations and antiphase domains, which effect the device performance. This work reports on the molecular beam epitaxial growth of high quality GaSb-based materials and devices onto Si. This was achieved using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step GaSb growth temperature procedure and a series of dislocation filter superlattices, resulting in a low defect density, anti-phase domain free GaSb buffer layer on Si. A nBn barrier photodetector based on a type-II InAs/InAsSb superlattice was grown on top of the buffer layer. The device exhibited an extended 50 % cut-off wavelength at 5.40 μm at 200 K which moved to 5.9 μm at 300 K. A specific detectivity of 1.5 x1010 Jones was measured, corresponding in an external quantum efficiency of 25.6 % at 200 K.

AB - GaSb-based materials can be used to produce high performance photonic devices operating in the technologically important mid-infrared spectral range. Direct epitaxial growth of GaSb on silicon (Si) is an attractive method to reduce manufacturing costs and opens the possibility of new applications, such as lab-on-a-chip MIR photonic integrated circuits and monolithic integration of focal plane arrays (FPAs) with Si readout integrated circuits (ROICs). However, fundamental material dissimilarities, such as the large lattice mismatch, polar-nonpolar character of the III-V/Si interface and differences in thermal expansion coefficients lead to the formation of threading dislocations and antiphase domains, which effect the device performance. This work reports on the molecular beam epitaxial growth of high quality GaSb-based materials and devices onto Si. This was achieved using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step GaSb growth temperature procedure and a series of dislocation filter superlattices, resulting in a low defect density, anti-phase domain free GaSb buffer layer on Si. A nBn barrier photodetector based on a type-II InAs/InAsSb superlattice was grown on top of the buffer layer. The device exhibited an extended 50 % cut-off wavelength at 5.40 μm at 200 K which moved to 5.9 μm at 300 K. A specific detectivity of 1.5 x1010 Jones was measured, corresponding in an external quantum efficiency of 25.6 % at 200 K.

U2 - 10.1117/12.2568741

DO - 10.1117/12.2568741

M3 - Conference contribution/Paper

VL - 11503

BT - Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X

PB - SPIE--The International Society for Optical Engineering

ER -