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Research

Professor Anthony Krier

Emeritus Professor

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  1. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

    Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M. & Krier, A., 3/12/2012, In: Applied Physics Letters. 101, 23, 5 p., 231101.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In: Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    InSb-based quantum dot nanostructures for mid-infrared photonic devices

    Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In: Proceedings of SPIE. 9919, 99190C.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  7. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  8. Published

    Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

    Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In: IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/10/2003, In: IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results.

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/09/2003, In: Optical Engineering. 42, 9, p. 2614-2623 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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