Anthony Krier - Publications & Outputs - Research Portal

Professor Anthony Krier

Emeritus Professor

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Published
High power 4.6 mu m light emitting diodes for CO detection. .
Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y., 21/12/1999, In: Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High quality InAs grown by liquid phase epitaxy using gadolinium gettering
Gao, H. H., Krier, A. & Sherstnev, V. V., 05/1999, In: Semiconductor Science and Technology. 14, 5, p. 441-445 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High tunability and superluminescence in InAs mid-infrared light emitting diodes. .
Sherstnev, V. V., Krier, A. & Hill, G., 7/02/2002, In: Journal of Physics D: Applied Physics. 35, 3, p. 196-198 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Highly-mismatched InAs/InSe heterojunction diodes
Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A., Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. & Patane, A., 2016, In: Applied Physics Letters. 109, 18, 4 p., 182115.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air
Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.
Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review
Published
High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .
Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. & Sherstnev, V. V., 24/02/2003, In: Applied Physics Letters. 82, 8, p. 1149-1151 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells
Wagener, M. C., Montesdeoca Cardenes, D., Lu, Q., Marshall, A. R. J., Krier, A., Botha, J. R. & Carrington, P. J., 01/2019, In: Solar Energy Materials and Solar Cells. 189, p. 233-238 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.
Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R., 1/02/2010, In: Applied Physics Letters. 96, 5, p. 052115
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
H-tailored surface conductivity in narrow band gap In(AsN)
Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q. & Tan, C. H., 12/01/2015, In: Applied Physics Letters. 106, 2, 4 p., 022111.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels
Velichko, A. V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q. & Patane, A., 20/08/2014, In: Physical review B. 90, 7 p., 085309.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
In(AsN) mid-infrared emission enhanced by rapid thermal annealing
Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C
Lu, Q., Zhou, X., Krysa, A., Marshall, A., Carrington, P., Tan, C-H. & Krier, A., 1/06/2018, In: Solar Energy Materials and Solar Cells. 179, p. 334-338 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs whispering gallery mode lasers for the mid-infrared spectral range. .
Sherstnev, V., Monakhov, A., Krier, A. & Wright, D. A., 02/2005, In: IEE Proceedings - Optoelectronics. 152, 1, p. 1-5 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency
Lu, Q., Krier, A., Zhou, Y., Cai, X., Xu, Z., Chen, J. & He, L., 27/06/2019, In: Applied Physics Letters. 114, 25, 5 p., 253507.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs
Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In: Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs-based dilute nitride materials and devices for the mid-infrared spectral range
Krier, A., De La Mare, M., Zhuang, Q., Carrington, P. J. & Patane, A., 4/02/2013, In: Proceedings of SPIE. 8631, 86311Q.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
Gao, H. H., Krier, A., Sherstnev, V. & Yakovlev, Y., 7/08/1999, In: Journal of Physics D: Applied Physics. 32, 15, p. 1768-1772 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance
Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In: Semiconductor Science and Technology. 30, 10, 7 p., 105011.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAsSbP quantum dots grown by liquid phase epitaxy
Krier, A., Labadi, Z. & Hammiche, A., 21/10/1999, In: Journal of Physics D: Applied Physics. 32, 20, p. 2587-2589 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 129-131 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 129-131 3 p. (Springer Proceedings in Physics).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
InSb-based quantum dot nanostructures for mid-infrared photonic devices
Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In: Proceedings of SPIE. 9919, 99190C.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .
Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In: Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface luminescence and lasing at a type II single broken-gap heterojunction
Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2003, 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Alferov, ZI. & Esaki, L. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 340-342 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .
Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.
Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P., 7/04/2002, In: Journal of Physics D: Applied Physics. 35, 7, p. 631-636 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .
Krier, A., Gao, H. H. & Sherstnev, V. V., 06/2000, In: IEE Proceedings - Optoelectronics. 147, 3, p. 217-221 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Investigation on InGaAs/InAlAs quantum cascade lasers.
Zhang, Q. S., Liu, F. Q., Zhang, Y. Z., Wang, Z. G., Gao, H. H. & Krier, A., 2001, In: Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
LEDs for formaldehyde detection at 3.6 mu m. .
Krier, A. & Sherstnev, V. V., 7/02/2001, In: Journal of Physics D: Applied Physics. 34, 3, p. 428-432 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer
Krier, A., Chubb, D., Krier, S. E., Hopkinson, M. & Hill, G., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 292-296 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor
Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A. & Patane, A., 2/10/2012, In: Nature Communications. 3, 5 p., 1097.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Liquid phase epitaxial growth and morphology of InSb quantum dots. .
Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In: Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings
Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
Lu, Q., Montesdeoca Cardenes, D., Carrington, P. J., Marshall, A. R. J., Krier, A. & Beanland, R., 1/03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 406-412 7 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes
Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A., 02/2011, In: Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion
Krier, A., Yin, M., Marshall, A. R. J. & Krier, S. E., 06/2016, In: Journal of Electronic Materials. 45, 6, p. 2826-2830 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap mid-infrared thermophotovoltaic arrays based on InAs
Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In: Infrared Physics and Technology. 73, p. 126-129 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low leakage-current InAsSb nanowire photodetectors on silicon
Thompson, M. D., Alhodaib, A., Craig, A. P., Robson, A. J., Aziz, A., Krier, A., Svensson, J., Wernersson, L., Sanchez, A. M. & Marshall, A. R. J., 13/01/2016, In: Nano Letters. 16, 1, p. 182-187 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low-voltage ZnO thin-film transistors employing Nd2O3 high-k dielectrics deposited by spray pyrolysis in air
Bin Esro, M., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.
Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review
Published
Magnetoresistance and electron mobility in dilute nitride InAsN alloys
Zhuang, Q., Feu, W. H. M., Patane, A., Makarovsky, O., Allison, G., Eaves, L., De La Mare, M., Krier, A. & Hill, G., 2009, In: AIP Conference Proceedings. 1288
Research output: Contribution to Journal/Magazine › Journal article
Published
MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices
de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A., 2011, In: Proceedings of SPIE. 7945, 79450L
Research output: Contribution to Journal/Magazine › Journal article
Published
Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications
Lu, Q., Marshall, A. & Krier, A., 29/05/2019, In: Materials. 12, 11, 8 p., 1743.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Mid-infrared diode lasers for free space optical communications
Yin, M., Krier, A., Krier, S., Jones, R. & Carrington, P., 2006, Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. Sjoqvist, LJ., Wilson, RA. & Merlet, TJ. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. U101-U106 6 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .
Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G. & Lin, H. H., 28/08/2006, In: Applied Physics Letters. 89, 9, p. 091110
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .
Krier, A. & Huang, X. L., 11/2002, In: Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.
Cook, N. B. & Krier, A., 13/07/2009, In: Applied Physics Letters. 95, 2, p. 021110
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 2009, Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York: IEEE, p. 2813-2814 2 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 1/12/2009, Conference on Lasers and Electro-Optics, CLEO 2009.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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Professor Anthony Krier

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