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Professor Manus Hayne SFHEA

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2006
Published
Réalisation d’un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
Cornet, C., Hayne, M., Levallois, C., Caroff, P., Homeyer, E., Even, J., Paranthoen, C., Folliot, H., Labbe, C. & Loualiche, S., 10/2006, In: Journal de Physique 4. 135, p. 141-142 2 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs/InP quantum dots: from single to coupled dots applications
Cornet, C., Schliwa, A., Hayne, M., Chauvin, N., Dore, F., Even, J., Moshchalkov, V. V., Bimberg, D., Bremond, G., Bru-Chevallier, C., Gendry, M. & Loualiche, S., 12/2006, In: Physica Status Solidi C. 3, 11, p. 4039-4042 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots
Cornet, C., Hayne, M., Caroff, P., Levallois, C., Joulaud, L., Homeyer, E., Paranthoen, C., Even, J., Labbe, C., Folliot, H., Moshchalkov, V. V. & Loualiche, S., 18/12/2006, In: Physical review B. 74, 24, p. - 10 p., 245315.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2007
Published
InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications
Cornet, C., Hayne, M., Schliwa, A., Dore, F., Even, J., Bimberg, D., Moshchalkov, V. V. & Loualiche, S., 7/02/2007, In: Physica Status Solidi C. 4, 2, p. 458-461 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots
Badcock, T. J., Hayne, M., Hopkinson, M., Jantsch, W., Liu, H. Y., Moshchalkov, V. V., Mowbray, D. J., Nabavi, E., Nuytten, T., Schaffler, F. & Steer, M. J., 10/04/2007, Physics of Semiconductors, Pts A and B. American Institute of Physics, Vol. 893. p. 951-952 2 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
Observation of PL intensity modulation in self-assembled Quantum Rings (QR) under strong pulsed magnetic fields
Garcia, J. M., Granados, D., Hayne, M., Jantsch, W., Moshchalkov, V. V., Schaffler, F. & Taboada, A. G., 4/05/2007, Physics of Semiconductors, Pts A and B. American Institute of Physics, Vol. 893. p. 947-948 2 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
Theory and experiment of InAs/InP quantum dots: from calculations to laser emission
Cornet, C., Hayne, M., Schliwa, A., Doré, F., Labbé, C., Folliot, H., Even, J., Bimberg, D., Moshchalkov, V. V. & Loualiche, S., 4/05/2007, In: AIP Conference Proceedings. 893, p. 779-780 2 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Erratum: Electron wave-function spillover in self-assembled InAs/InP quantum wires (vol 70, art no 155311, 2004)
Fuster, D., Garcia, J. M., Gonzalez, L., Gonzalez, Y., Hayne, M., Maes, J., Moshchalkov, V. V., Partoens, B., Peeters, F. M. & Sidor, Y., 12/11/2007, In: Physical review B. 76, 1 p., 199902(E).
Research output: Contribution to Journal/Magazine › Journal article
Published
Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field.
Sidor, Y., Partoens, B., Peeters, F. M., Maes, J., Hayne, M., Fuster, D., Gonzalez, Y., Gonzalez, L. & Moshchalkov, V. V., 19/11/2007, In: Physical review B. 76, 195320, p. 1-9 10 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells.
Bansal, B., Hayne, M., Arora, B. A. & Moshchalkov, V. V., 17/12/2007, In: Applied Physics Letters. 91, 25, 251108.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2008
Published
Classification and control of the origin of photoluminescence from Si nanocrystals.
Godefroo, S., Hayne, M., Jivanescu, M., Stesmans, A., Zacharias, M., Lededev, O., Van Tendeloo, G. & Moshchalkov, V. V., 2/03/2008, In: Nature Nanotechnology. 3, 3, p. 174-178 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.
Nuytten, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 25/03/2008, In: Physical review B. 77, p. 115348
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Excitonic Mott transition in type-II quantum dots.
Bansal, B., Hayne, M., Geller, M., Bimberg, D. & Moshchalkov, V., 13/06/2008, In: Physical review B. 77, 4 p., 241304(R).
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2009
Published
Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.
Nuytten, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 03/2009, In: Microelectronics Journal. 40, 3, p. 486-488 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Extended excitons and compact heliumlike biexcitons in type-II quantum dots.
Bansal, B., Godefroo, S., Hayne, M., Medeiros-Ribeiro, G. & Moshchalkov, V., 18/11/2009, In: Physical review B. 80, 20, 205137.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2010
Published
GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.
Ahmad Kamarudin, M., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V. & Dinelli, F., 26/01/2010, In: Journal of Physics D: Applied Physics. 43, 6, p. 065402
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2011
Published
Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
Kamarudin, M. A., Hayne, M., Young, R. J., Zhuang, Q. D., Ben, T. & Molina, S. I., 10/03/2011, In: Physical review B. 83, 11, 6 p., 115311 .
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells
Nuytten, T., Hayne, M., Bansal, B., Liu, H. Y., Hopkinson, M. & Moshchalkov, V. V., 5/07/2011, In: Physical review B. 84, 045302.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2012
Published
Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution
Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M. & Pingue, P., 2012, NSTI-Nanotech 2012. Santa Clara, USA: CRC PRESS-TAYLOR & FRANCIS GROUP, p. 24-26 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Optical observation of single-carrier charging in type-II quantum ring ensembles
Young, R., Smakman, E. P., Sanchez, A. M., Hodgson, P., Koenraad, P. M. & Hayne, M., 20/02/2012, In: Applied Physics Letters. 100, 8, p. - 4 p., 082104.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
Smakman, E. P., Garleff, J. K., Young, R. J., Hayne, M., Rambabu, P. & Koenraad, P. M., 2/04/2012, In: Applied Physics Letters. 100, 14, p. - 3 p., 142116.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High-field magneto-photoluminescence of semiconductor nanostructures
Hayne, M. & Bansal, B., 05/2012, In: Luminescence. 27, 3, p. 179-196 18 p.
Research output: Contribution to Journal/Magazine › Literature review › peer-review
Published
Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots
Nowozin, T., Marent, A., Bonato, L., Schliwa, A., Bimberg, D., Smakman, E. P., Garleff, J. K., Koenraad, P. M., Young, R. J. & Hayne, M., 6/07/2012, In: Physical review B. 86, 3, p. - 6 p., 035305.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2013
Published
High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy
Robson, A., Grishin, I., Young, R., Sanchez, A. M., Kolosov, O. & Hayne, M., 2013, In: ACS Applied Materials and Interfaces. 5, 8, p. 3241-3245 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings
Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory
Hayne, M., Young, R. J., Smakman, E. P., Nowozin, T., Hodgson, P., Garleff, J. K., Rambabu, P., Koenraad, P. M., Marent, A., Bonato, L., Schliwa, A. & Bimberg, D., 3/07/2013, In: Journal of Physics D: Applied Physics. 46, 26, 10 p., 264001.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A., 31/07/2013, In: Journal of Physics D: Applied Physics. 46, 30, 6 p., 305104.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures
Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Antimonide quantum dot nanostructures for novel photonic device applications
Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J. R., Koenraad, P. M. & Smakman, E. P., 5/11/2013, The wonder of nanotechnology: quantum optoelectronic devices and applications . SPIE
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter (peer-reviewed) › peer-review
2014
Published
Spectroscopy of single GaSb quantum rings: a route towards practical quantum communication
Roberts, J., Young, M., Noori, Y., Smakman, E. P., Koenraad, P. M., Hayne, M. & Young, R., 14/05/2014.
Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review
Published
A route towards practical quantum communication
Roberts, J., Young, M., Noori, Y., Smakman, E. P., Koenraad, P. M., Hayne, M. & Young, R., 10/07/2014.
Research output: Contribution to conference - Without ISBN/ISSN › Poster
Published
Photoluminescence studies of single GaSb quantum rings
Young, M., Roberts, J., Woodhead, C., Noori, Y., Sanchez, A., Smakman, E. P., Koenraad, P. M., Hayne, M. & Young, R., 10/07/2014.
Research output: Contribution to conference - Without ISBN/ISSN › Abstract › peer-review
Published
Hydrogenation of GaSb/GaAs quantum rings
Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.
Research output: Contribution to Journal/Magazine › Journal article
Published
Photoluminescence studies of individual and few GaSb/GaAs quantum rings
Young, M. P., Woodhead, C. S., Roberts, J., Noori, Y. J., Noble, M. T., Krier, A., Smakman, E. P., Koenraad, P. M., Hayne, M. & Young, R. J., 1/11/2014, In: AIP Advances. 4, 11, 6 p., 117127.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2015
Published
Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths
Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V. & Henini, M., 2015, IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France: IEEE, p. 43-46 4 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots
Chang, Y-C., Robson, A., Harrison, S., Zhuang, Q. & Hayne, M., 22/06/2015, In: AIP Advances. 5, 6, 6 p., 067141.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Efficient optical coupling to semiconductor quantum dots, using tunable microfluidically-formed solid immersion lenses
Woodhead, C., Hodgson, P., Young, M., Roberts, J., Noori, Y., Hayne, M. & Young, R., 1/07/2015.
Research output: Contribution to conference - Without ISBN/ISSN › Abstract
2016
Published
GaSb quantum rings in GaAs/Al_xGa_1−xAs quantum wells
Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots
Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M. & Krier, A., 12/02/2016, In: Nanotechnology. 27, 6, 6 p., 065602.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 08/2016, In: Journal of Materials Science. 51, 16, p. 7691-7698 8 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2017
Published
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 15/02/2017, In: Applied Surface Science. 395, p. 136-139 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Photoelectrolysis Using Type-II Semiconductor Heterojunctions
Hayne, M. & Harrison, S., 14/09/2017, In: Scientific Reports. 7, 11 p., 11638.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Exciton confinement in strain-engineered metamorphic InAs/In_xGa_1-xAs quantum dots
Khattak, S. A., Hayne, M., Huang, J., Vanacken, J., Moshchalkov, V., Seravalli, L., Trevisi, G. & Frigeri, P., 15/11/2017, In: Physical review B. 96, 19, 8 p., 195301.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2018
Published
Transport of modulation-doped Al_0.2Ga_0.8Sb/GaSb heterojunctions
Hanks, L., Hayne, M., Marshall, A. R. J. & Ponomarenko, L. A., 2/03/2018, In: Journal of Physics: Conference Series. 964, 5 p., 012006.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2019
Published
Binding energies of excitonic complexes in type-II quantum rings from diffusion quantum Monte Carlo calculations
Thomas, D., Hunt, R. J., Drummond, N. D. & Hayne, M., 15/03/2019, In: Physical Review B: Condensed Matter and Materials Physics. 99, 11, 6 p., 115306.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells
Tizno, O., Marshall, A., Fernández-Delgado, N., Herrera, M., Molina, S. I. & Hayne, M., 20/06/2019, In: Scientific Reports. 9, 8 p., 8950.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Control of complex quantum structures in droplet epitaxy
Chawner, J. M. A., Chang, Y., Hodgson, P. D., Hayne, M., Robson, A. J., Sanchez, A. M. & Zhuang, Q., 13/08/2019, In: Semiconductor Science and Technology. 34, 9, 7 p., 095011.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
2020
Published
Simulations of ultra-low power non-volatile cells for random access memory
Lane, D. & Hayne, M., 1/02/2020, In: IEEE Transactions on Electron Devices. 67, 2, p. 474-480 7 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Professor Manus Hayne SFHEA

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