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Professor Anthony Krier

Emeritus Professor

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  1. Published

    Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

    De La Mare, M., Zhuang, Q., Krier, A. & Patane, A., 3/10/2012, In: Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In: Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

    Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO 2 detection

    Al-Saymari, F. A., Craig, A. P., Noori, Y. J., Lu, Q., Marshall, A. R. J. & Krier, A., 1/05/2019, In: Applied Physics Letters. 114, 17, 4 p., 171103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

    Krier, A. & Huang, X. L., 2002, Physics and Simulation of Optoelectronic Devices X. Blood, P., Osinski, M. & Arakawa, Y. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 70-78 9 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  6. Published

    Electroluminescence from InSb-based mid-infrared quantum well lasers.

    Smith, S. J., Przeslak, S. J. B., Nash, G. R., Storey, C. J., Andreev, A. D., Krier, A., Yin, M., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 2008, Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 159-161 3 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  7. Published

    Electron coherence length and mobility in highly mismatched III-N-V alloys.

    Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M. & Hill, G., 23/12/2008, In: Applied Physics Letters. 93, 25, p. 252106

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

    Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M. & Krier, A., 3/12/2012, In: Applied Physics Letters. 101, 23, 5 p., 231101.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 28/07/2014, In: Journal of Applied Physics. 116, 4, 6 p., 044304.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

    Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In: IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    FDTD modelling of mid infrared disk lasers

    Pugh, J. R., Buss, I. J., Nash, G. R., AshleY, T., Krier, A., Cryan, M. J. & Rarity, J. G., 2007, ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4. Marciniak, M. (ed.). New York: IEEE, p. 208-211 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  13. Published

    Fundamental physics and practical realisation of mid-infrared photodetectors.

    Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V., 10/2004, In: Proceedings of SPIE. 5564, p. 92-104 13 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

    Smirnov, V. M., Batty, P. J., Jones, R., Krier, A., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 04/2007, In: physica status solidi (a). 204, 4, p. 1047-1050 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

    Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. & Ashley, T., 23/09/2008, In: Applied Physics Letters. 93, 12, p. 121106

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    GaSb-based solar cells for multi-junction integration on Si substrates

    Tournet, J., Parola, S., Vauthelin, A., Montesdeoca Cardenes, D., Soresi, S., Martinez, F., Lu, Q., Cuminal, Y., Carrington, P. J., Décobert, J., Krier, A., Rouillard, Y. & Tournié, E., 03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 444-450 7 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    General theory of multi-phase melt crystallization. .

    Charykov, N. A., Sherstnev, V. V. & Krier, A., 02/2002, In: Journal of Crystal Growth. 234, 4, p. 762-772 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  20. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In: Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    Growth of InAsSb quantum wells by liquid phase epitaxy.

    Yin, M., Krier, A. & Jones, R., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 65-68 4 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  22. Published

    Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

    Huang, X. L., Labadi, Z., Hammiche, A. & Krier, A., 7/12/2002, In: Journal of Physics D: Applied Physics. 35, 23, p. 3091-3095 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. Published

    Growth optimization of self-organized InSb/InAs quantum dots.

    Zhuang, Q., Carrington, P. J. & Krier, A., 13/11/2008, In: Journal of Physics D: Applied Physics. 41, 23, 4 p., 232003.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  25. Published

    Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

    Delli, E., Hodgson, P. D., Repiso Menendez, E., Craig, A. P., Hayton, J., Lu, Q., Marshall, A. R. J., Krier, A. & Carrington, P. J., 1/06/2019, In: IEEE Photonics Journal. 11, 3, 8 p., 2200608.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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