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Professor Anthony Krier

Emeritus Professor

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  1. Published

    A novel LED module for the detection of H2S at 3.8 mu m. .

    Krier, A., Sherstnev, V. V. & Gao, H. H., 21/07/2000, In: Journal of Physics D: Applied Physics. 33, 14, p. 1656-1661 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

    Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M. & Krier, A., 12/02/2016, In: Nanotechnology. 27, 6, 6 p., 065602.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/10/2003, In: IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Antimonide quantum dot nanostructures for novel photonic device applications

    Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J. R., Koenraad, P. M. & Smakman, E. P., 5/11/2013, The wonder of nanotechnology: quantum optoelectronic devices and applications . SPIE

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter (peer-reviewed) › peer-review

  5. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  6. Published

    Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

    Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M. C. & Botha, J. R., 03/2014, In: Semiconductor Science and Technology. 29, 3, 5 p., 035014.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation

    James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A. & Krier, A., 04/2014, In: IET Optoelectronics. 8, 2, p. 76-80 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

    Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In: AIMS Materials Science. 2, 2, p. 86-96 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

    Garduno-Nolasco, E., Carrington, P. J., Krier, A. & Missous, M., 04/2014, In: IET Optoelectronics. 8, 2, p. 71-75 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

    Krier, A., Stone, M. & Krier, S. E., 06/2007, In: Semiconductor Science and Technology. 22, 6, p. 624-628 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias

    Jones, R., Krier, A., Davidson, K., Schmit, J. P. N. & Zawadzka, J., 26/02/1999, In: Thin Solid Films. 340, 1-2, p. 221-229 9 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Coupling in type II GaSb/GaAs quantum ring solar cells

    Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.

    Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

  13. Published

    Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

    Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder), 04/2011, In: Applied Physics Letters. 98, 16, p. 162109

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

    James Asirvatham, J. S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S. I., Marshall, A. R. J. & Krier, A., 2015, In: Materials Research Innovations. 19, 7, p. 512-516 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 21/01/2006, In: Journal of Physics D: Applied Physics. 39, 2, p. 255-261 7 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 30/09/2008, In: Thin Solid Films. 516, 22, p. 8049-8058 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707

    Yin, M., Krier, A., Jones, R., Krier, S. & Campbell, D., 2006, Technologies for Optical Countermeasures III. Titterton, DH. (ed.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 39707-39707 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  18. Published

    Development of dilute nitride materials for mid-infrared diode lasers

    Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A. & Kudrawiec, R., 09/2012, In: Semiconductor Science and Technology. 27, 9, 8 p., 094009 .

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

    Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 69-72 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  20. Published

    Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE.

    Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 69-72 4 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  21. Published

    Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

    Cheetham, K. J., Krier, A., Marko, I. P., Aldukhayel, A. & Sweeney, S. J., 3/10/2011, In: Applied Physics Letters. 99, 14, p. - 3 p., 141110.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results.

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/09/2003, In: Optical Engineering. 42, 9, p. 2614-2623 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. Published

    Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

    Fernández-Delgado, N., Herrera, M., Molina, S. I., Castro, C., Duguay, S., James, J. S. & Krier, A., 30/12/2015, In: Applied Surface Science. 359, p. 676-678 3 p.

    Research output: Contribution to Journal/Magazine › Letter › peer-review

  24. Published

    Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.

    Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q. D., Helm, M., Goiran, M. & Hill, G., 16/09/2009, In: Physical review B. 80, 11, p. 115207

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

    Khan, A., Repiso Menendez, E., Herrera, M., Carrington, P., De La Mata, M., Pizarro, J., Krier, A. & Molina, S., 16/12/2019, In: Nanotechnology. 31, 10, 9 p., 105702.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  26. Published

    Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

    De La Mare, M., Zhuang, Q., Krier, A. & Patane, A., 3/10/2012, In: Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  27. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In: Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  28. Published

    Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

    Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  29. Published

    Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO 2 detection

    Al-Saymari, F. A., Craig, A. P., Noori, Y. J., Lu, Q., Marshall, A. R. J. & Krier, A., 1/05/2019, In: Applied Physics Letters. 114, 17, 4 p., 171103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  30. Published

    Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

    Krier, A. & Huang, X. L., 2002, Physics and Simulation of Optoelectronic Devices X. Blood, P., Osinski, M. & Arakawa, Y. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 70-78 9 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  31. Published

    Electroluminescence from InSb-based mid-infrared quantum well lasers.

    Smith, S. J., Przeslak, S. J. B., Nash, G. R., Storey, C. J., Andreev, A. D., Krier, A., Yin, M., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 2008, Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 159-161 3 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  32. Published

    Electron coherence length and mobility in highly mismatched III-N-V alloys.

    Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M. & Hill, G., 23/12/2008, In: Applied Physics Letters. 93, 25, p. 252106

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  33. Published

    Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

    Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M. & Krier, A., 3/12/2012, In: Applied Physics Letters. 101, 23, 5 p., 231101.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  34. Published

    Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 28/07/2014, In: Journal of Applied Physics. 116, 4, 6 p., 044304.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  35. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  36. Published

    Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

    Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In: IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  37. Published

    FDTD modelling of mid infrared disk lasers

    Pugh, J. R., Buss, I. J., Nash, G. R., AshleY, T., Krier, A., Cryan, M. J. & Rarity, J. G., 2007, ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4. Marciniak, M. (ed.). New York: IEEE, p. 208-211 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  38. Published

    Fundamental physics and practical realisation of mid-infrared photodetectors.

    Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V., 10/2004, In: Proceedings of SPIE. 5564, p. 92-104 13 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  39. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  40. Published

    Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  41. Published

    GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

    Smirnov, V. M., Batty, P. J., Jones, R., Krier, A., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 04/2007, In: physica status solidi (a). 204, 4, p. 1047-1050 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  42. Published

    GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

    Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. & Ashley, T., 23/09/2008, In: Applied Physics Letters. 93, 12, p. 121106

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  43. Published

    GaSb-based solar cells for multi-junction integration on Si substrates

    Tournet, J., Parola, S., Vauthelin, A., Montesdeoca Cardenes, D., Soresi, S., Martinez, F., Lu, Q., Cuminal, Y., Carrington, P. J., Décobert, J., Krier, A., Rouillard, Y. & Tournié, E., 03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 444-450 7 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  44. Published

    General theory of multi-phase melt crystallization. .

    Charykov, N. A., Sherstnev, V. V. & Krier, A., 02/2002, In: Journal of Crystal Growth. 234, 4, p. 762-772 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  45. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In: Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  46. Published

    Growth of InAsSb quantum wells by liquid phase epitaxy.

    Yin, M., Krier, A. & Jones, R., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 65-68 4 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  47. Published

    Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

    Huang, X. L., Labadi, Z., Hammiche, A. & Krier, A., 7/12/2002, In: Journal of Physics D: Applied Physics. 35, 23, p. 3091-3095 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  48. Published

    Growth optimization of self-organized InSb/InAs quantum dots.

    Zhuang, Q., Carrington, P. J. & Krier, A., 13/11/2008, In: Journal of Physics D: Applied Physics. 41, 23, 4 p., 232003.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  49. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  50. Published

    Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

    Delli, E., Hodgson, P. D., Repiso Menendez, E., Craig, A. P., Hayton, J., Lu, Q., Marshall, A. R. J., Krier, A. & Carrington, P. J., 1/06/2019, In: IEEE Photonics Journal. 11, 3, 8 p., 2200608.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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