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Professor Anthony Krier

Professor

  1. 2019
  2. Forthcoming

    Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

    Repiso Menendez, E., Broderick, C., de la Mata, M., Arkani, R., Lu, Q., Marshall, A., Molina, S., O'Reilly, E., Carrington, P. & Krier, A., 1/08/2019, (Accepted/In press) In : Journal of Physics D: Applied Physics.

    Research output: Contribution to journalJournal article

  3. Published

    InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency

    Lu, Q., Krier, A., Zhou, Y., Cai, X., Xu, Z., Chen, J. & He, L., 27/06/2019, In : Applied Physics Letters. 114, 25, 5 p., 253507.

    Research output: Contribution to journalJournal article

  4. Published

    Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

    Delli, E., Hodgson, P. D., Repiso Menendez, E., Craig, A. P., Hayton, J., Lu, Q., Marshall, A. R. J., Krier, A. & Carrington, P. J., 1/06/2019, In : IEEE Photonics Journal. 11, 3, 8 p., 2200608.

    Research output: Contribution to journalJournal article

  5. Published

    Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications

    Lu, Q., Marshall, A. & Krier, A., 29/05/2019, In : Materials. 12, 11, 8 p., 1743.

    Research output: Contribution to journalJournal article

  6. Published

    Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO 2 detection

    Al-Saymari, F. A., Craig, A. P., Noori, Y. J., Lu, Q., Marshall, A. R. J. & Krier, A., 1/05/2019, In : Applied Physics Letters. 114, 17, 4 p., 171103.

    Research output: Contribution to journalJournal article

  7. Published

    Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

    Craig, A. P., Al-Saymari, F., Jain, M., Bainbridge, A., Savich, G. R., Golding, T., Krier, A., Wicks, G. W. & Marshall, A. R., 15/04/2019, In : Applied Physics Letters. 114, 15, 5 p., 151107.

    Research output: Contribution to journalJournal article

  8. Published

    Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer

    Lu, Q., Montesdeoca Cardenes, D., Carrington, P. J., Marshall, A. R. J., Krier, A. & Beanland, R., 1/03/2019, In : Solar Energy Materials and Solar Cells. 191, p. 406-412 7 p.

    Research output: Contribution to journalJournal article

  9. Published

    GaSb-based solar cells for multi-junction integration on Si substrates

    Tournet, J., Parola, S., Vauthelin, A., Montesdeoca Cardenes, D., Soresi, S., Martinez, F., Lu, Q., Cuminal, Y., Carrington, P. J., Décobert, J., Krier, A., Rouillard, Y. & Tournié, E., 03/2019, In : Solar Energy Materials and Solar Cells. 191, p. 444-450 7 p.

    Research output: Contribution to journalJournal article

  10. Published

    Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

    Delli, E., Letka, V., Hodgson, P. D., Repiso Menendez, E., Hayton, J., Craig, A. P., Lu, Q., Beanland, R., Krier, A., Marshall, A. R. J. & Carrington, P. J., 28/02/2019, In : ACS Photonics. 6, 2, p. 538–544 7 p.

    Research output: Contribution to journalJournal article

  11. Published

    Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

    Khan, A., Herrera, M., Pizarro, J., Galindo, P. L., Carrington, P. J., Fujita, H., Krier, A. & Molina, S. I., 1/02/2019, In : Journal of Materials Science. 54, 4, p. 3230-3241 12 p.

    Research output: Contribution to journalJournal article

  12. Published

    Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Montesdeoca Cardenes, D., Lu, Q., Marshall, A. R. J., Krier, A., Botha, J. R. & Carrington, P. J., 01/2019, In : Solar Energy Materials and Solar Cells. 189, p. 233-238 6 p.

    Research output: Contribution to journalJournal article

  13. 2018
  14. Published

    Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

    Montesdeoca Cardenes, D., Carrington, P. J., Marko, I. P., Wagener, M. C., Sweeney, S. J. & Krier, A., 1/12/2018, In : Solar Energy Materials and Solar Cells. 187, 1, p. 227-232 6 p.

    Research output: Contribution to journalJournal article

  15. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In : Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to journalJournal article

  16. Published

    InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C

    Lu, Q., Zhou, X., Krysa, A., Marshall, A., Carrington, P., Tan, C-H. & Krier, A., 1/06/2018, In : Solar Energy Materials and Solar Cells. 179, p. 334-338 5 p.

    Research output: Contribution to journalJournal article

  17. Published

    Coupling in type II GaSb/GaAs quantum ring solar cells

    Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.

    Research output: Contribution to conference - Without ISBN/ISSN Conference paper

  18. Published

    InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

    Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In : Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.

    Research output: Contribution to journalJournal article

  19. Published

    Room temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

    Alhodaib, A., Noori, Y., Carrington, P. J., Sanchez, A., Thompson, M. D., Young, R. J., Krier, A. & Marshall, A. R. J., 10/01/2018, In : Nano Letters. 18, 1, p. 235-240 6 p.

    Research output: Contribution to journalJournal article

  20. 2017
  21. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  22. Published

    Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

    Tang, L., Xu, C., Liu, Z., Lu, Q., Marshall, A. & Krier, A., 04/2017, In : Solar Energy Materials and Solar Cells. 163, p. 263-269 7 p.

    Research output: Contribution to journalJournal article

  23. 2016
  24. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In : Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to journalJournal article

  25. Published

    Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In : Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to journalJournal article

  26. Published

    InSb-based quantum dot nanostructures for mid-infrared photonic devices

    Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In : Proceedings of SPIE. 9919, 99190C.

    Research output: Contribution to journalJournal article

  27. Published

    Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A. V., Eaves, L., Mori, N., Krier, A. & Patane, A., 18/08/2016, In : Scientific Reports. 6, 8 p., 32039.

    Research output: Contribution to journalJournal article

  28. Published

    Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion

    Krier, A., Yin, M., Marshall, A. R. J. & Krier, S. E., 06/2016, In : Journal of Electronic Materials. 45, 6, p. 2826-2830 5 p.

    Research output: Contribution to journalJournal article

  29. Published

    Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes

    Bin Esro, M., Georgakopoulos, S., Lu, H., Vourlias, G., Krier, A., Milne, W. I., Gillin, W. P. & Adamopoulos, G., 28/04/2016, In : Journal of Materials Chemistry C. 4, 16, p. 3563-3570 8 p.

    Research output: Contribution to journalJournal article

  30. Published

    Structural Quality of GaSb/GaAs Quantum Dots for Solar Cells Analyzed by Electron Microscopy Techniques

    Fernández-Delgado, N., Herrera, M., Baladés, N., James, J. S., Krier, A., Fujita, H. & Molina, S. I., 03/2016, In : Microscopy and Microanalysis. p. 38-39 2 p.

    Research output: Contribution to journalMeeting abstract

  31. Published

    An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

    Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M. & Krier, A., 12/02/2016, In : Nanotechnology. 27, 6, 6 p., 065602.

    Research output: Contribution to journalJournal article

  32. Published

    The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys

    Latkowska, M., Baranowski, M., Linhart, W. M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A. & Kudrawiec, R., 11/02/2016, In : Journal of Physics D: Applied Physics. 49, 11, 7 p., 115105.

    Research output: Contribution to journalJournal article

  33. Published

    Low leakage-current InAsSb nanowire photodetectors on silicon

    Thompson, M. D., Alhodaib, A., Craig, A. P., Robson, A. J., Aziz, A., Krier, A., Svensson, J., Wernersson, L., Sanchez, A. M. & Marshall, A. R. J., 13/01/2016, In : Nano Letters. 16, 1, p. 182-187 6 p.

    Research output: Contribution to journalJournal article

  34. Published

    Highly-mismatched InAs/InSe heterojunction diodes

    Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A., Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. & Patane, A., 2016, In : Applied Physics Letters. 109, 18, 4 p., 182115.

    Research output: Contribution to journalJournal article

  35. 2015
  36. Published

    Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

    Fernández-Delgado, N., Herrera, M., Molina, S. I., Castro, C., Duguay, S., James, J. S. & Krier, A., 30/12/2015, In : Applied Surface Science. 359, p. 676-678 3 p.

    Research output: Contribution to journalLetter

  37. Published

    Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration

    Fujita, H., Carrington, P. J., Wagener, M. C., Botha, J. R., Marshall, A. R. J., James, J., Krier, A., Lee, K-H. & Ekins-Daukes, N. J., 12/2015, In : Progress in Photovoltaics: Research and Applications. 23, 12, p. 1896-1900 5 p.

    Research output: Contribution to journalJournal article

  38. Published

    Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

    Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In : Infrared Physics and Technology. 73, p. 126-129 4 p.

    Research output: Contribution to journalJournal article

  39. Published

    Peculiarities of the hydrogenated In(AsN) alloy

    Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q., Krier, A., Patane, A., Polimeni, A. & Capizzi, M., 14/09/2015, In : Semiconductor Science and Technology. 30, p. 105030 10 p.

    Research output: Contribution to journalJournal article

  40. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In : Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to journalJournal article

  41. Published

    Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In : Applied Physics Letters. 106, 4 p., 232105.

    Research output: Contribution to journalJournal article

  42. Published

    Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer

    Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In : AIMS Materials Science. 2, 2, p. 86-96 11 p.

    Research output: Contribution to journalJournal article

  43. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In : Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to journalJournal article

  44. Published

    ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air

    Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 8/04/2015, In : ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341 8 p.

    Research output: Contribution to journalJournal article

  45. Published

    H-tailored surface conductivity in narrow band gap In(AsN)

    Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q. & Tan, C. H., 12/01/2015, In : Applied Physics Letters. 106, 2, 4 p., 022111.

    Research output: Contribution to journalJournal article

  46. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In : Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to journalJournal article

  47. Published

    Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell

    James Asirvatham, J. S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S. I., Marshall, A. R. J. & Krier, A., 2015, In : Materials Research Innovations. 19, 7, p. 512-516 5 p.

    Research output: Contribution to journalJournal article

  48. Published

    High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air

    Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN Poster

  49. Published

    Low-voltage ZnO thin-film transistors employing Nd2O3 high-k dielectrics deposited by spray pyrolysis in air

    Bin Esro, M., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN Poster

  50. Published

    Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

    Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V. & Henini, M., 2015, IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France: IEEE, p. 43-46 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  51. Published

    Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

    Bin Esro, M., Mazzocco, R., Vourlias, G., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN Poster

  52. 2014
  53. Published

    Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    Young, M. P., Woodhead, C. S., Roberts, J., Noori, Y. J., Noble, M. T., Krier, A., Smakman, E. P., Koenraad, P. M., Hayne, M. & Young, R. J., 1/11/2014, In : AIP Advances. 4, 11, 6 p., 117127.

    Research output: Contribution to journalJournal article

  54. Published

    Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

    Velichko, A. V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q. & Patane, A., 20/08/2014, In : Physical review B. 90, 7 p., 085309.

    Research output: Contribution to journalJournal article

  55. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In : Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to journalJournal article

  56. Published

    Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 28/07/2014, In : Journal of Applied Physics. 116, 4, 6 p., 044304.

    Research output: Contribution to journalJournal article

  57. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In : Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to journalJournal article

  58. Published

    Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation

    James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A. & Krier, A., 04/2014, In : IET Optoelectronics. 8, 2, p. 76-80 5 p.

    Research output: Contribution to journalJournal article

  59. Published

    Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

    Garduno-Nolasco, E., Carrington, P. J., Krier, A. & Missous, M., 04/2014, In : IET Optoelectronics. 8, 2, p. 71-75 5 p.

    Research output: Contribution to journalJournal article

  60. Published

    Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

    Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M. C. & Botha, J. R., 03/2014, In : Semiconductor Science and Technology. 29, 3, 5 p., 035014.

    Research output: Contribution to journalJournal article

  61. Published

    Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 7/01/2014, In : Journal of Applied Physics. 115, 1, 3 p., 014302.

    Research output: Contribution to journalJournal article

  62. Published

    Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In : Applied Physics Letters. 105, 3, 3 p., 031115.

    Research output: Contribution to journalJournal article

  63. 2013
  64. Published

    Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

    Craig, A., Marshall, A., Tian, Z-B., Krishna, S. & Krier, A., 16/12/2013, In : Applied Physics Letters. 103, 4 p., 253502.

    Research output: Contribution to journalJournal article

  65. Published

    Antimonide quantum dot nanostructures for novel photonic device applications

    Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J. R., Koenraad, P. M. & Smakman, E. P., 5/11/2013, The wonder of nanotechnology: quantum optoelectronic devices and applications . SPIE

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter (peer-reviewed)

  66. E-pub ahead of print

    Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

    Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 6/08/2013, In : Applied Physics Letters. 103, 6, 4 p., 063902.

    Research output: Contribution to journalJournal article

  67. Published

    Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

    Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A., 31/07/2013, In : Journal of Physics D: Applied Physics. 46, 30, 6 p., 305104.

    Research output: Contribution to journalJournal article

  68. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In : Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to journalJournal article

  69. Published

    InAs-based dilute nitride materials and devices for the mid-infrared spectral range

    Krier, A., De La Mare, M., Zhuang, Q., Carrington, P. J. & Patane, A., 4/02/2013, In : Proceedings of SPIE. 8631, 86311Q.

    Research output: Contribution to journalJournal article

  70. 2012
  71. Published

    Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

    Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M. & Krier, A., 3/12/2012, In : Applied Physics Letters. 101, 23, 5 p., 231101.

    Research output: Contribution to journalJournal article

  72. Published

    Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy

    De La Mare, M., Zhuang, Q., Krier, A. & Patane, A., 3/10/2012, In : Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105 3 p.

    Research output: Contribution to journalJournal article

  73. Published

    Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

    Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A. & Patane, A., 2/10/2012, In : Nature Communications. 3, 5 p., 1097.

    Research output: Contribution to journalJournal article

  74. Published

    Development of dilute nitride materials for mid-infrared diode lasers

    Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A. & Kudrawiec, R., 09/2012, In : Semiconductor Science and Technology. 27, 9, 8 p., 094009 .

    Research output: Contribution to journalJournal article

  75. Published

    Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A., 15/05/2012, In : Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

    Research output: Contribution to journalJournal article

  76. Published

    Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

    Das, S. K., Das, T. D., Dhar, S., de la Mare, M. & Krier, A., 01/2012, In : Infrared Physics and Technology. 55, 1, p. 156-160 5 p.

    Research output: Contribution to journalJournal article

  77. Published

    Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

    Cheetham, K. J., Carrington, P. J., Krier, A., Patel, I. I. & Martin, F. L., 01/2012, In : Semiconductor Science and Technology. 27, 1, p. - 4 p., 015004.

    Research output: Contribution to journalJournal article

  78. Published

    Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution

    Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M. & Pingue, P., 2012, NSTI-Nanotech 2012. Santa Clara, USA: CRC PRESS-TAYLOR & FRANCIS GROUP, p. 24-26 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  79. 2011
  80. Published

    Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

    Cheetham, K. J., Krier, A., Marko, I. P., Aldukhayel, A. & Sweeney, S. J., 3/10/2011, In : Applied Physics Letters. 99, 14, p. - 3 p., 141110.

    Research output: Contribution to journalJournal article

  81. Published

    N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

    de la Mare, M., Das, S. C., Das, T. D., Dhar, S. & Krier, A., 10/08/2011, In : Journal of Physics D: Applied Physics. 44, 31, p. - 7 p., 315102.

    Research output: Contribution to journalJournal article

  82. Published

    Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.

    Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder), 04/2011, In : Applied Physics Letters. 98, 16, p. 162109

    Research output: Contribution to journalJournal article

  83. Published

    Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

    Cheetham, K. J., Krier, A., Patel, I. I., Martin, F. L., Tzeng, J-S., Wu, C-J., Lin, H-H. & EPSRC Studentship for KJC (Funder), 2/03/2011, In : Journal of Physics D: Applied Physics. 44, 8, p. 085405

    Research output: Contribution to journalJournal article

  84. Published

    Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

    Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A., 02/2011, In : Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.

    Research output: Contribution to journalJournal article

  85. Published

    MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

    de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A., 2011, In : Proceedings of SPIE. 7945, 79450L

    Research output: Contribution to journalJournal article

  86. Published

    Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes

    Carrington, P., de la Mare, M., Cheetham, K. J., Zhuang, Q. & Krier, A., 2011, In : Advances in OptoElectronics. 2011, n/a, 8 p., 145012.

    Research output: Contribution to journalJournal article

  87. Published

    Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

    Kudrawiec, R., Latkowska, M., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 2011, In : Applied Physics Letters. 99, 1, 3 p., 011904.

    Research output: Contribution to journalJournal article

  88. 2010
  89. Published

    Structural and optical properties of dilute InAsN grown by molecular beam epitaxy.

    Ibanez, J., Oliva, R., de la Mare, M., Schmidbauer, M., Hernandez, S., Pellegrino, P., Scurr, D. J., Cusco, R., Artus, L., Shafi, M., Mari, R. H., Henini, M., Zhuang, Q., Godenir, A. M. R., Krier, A., Spanish Ministry of Education and Science Project No. MAT2007-63617 (Funder) & EPRSC (UK) (Funder), 11/2010, In : Journal of Applied Physics. 108, 10, p. 103504

    Research output: Contribution to journalJournal article

  90. Published

    Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range.

    de la Mare, M., Carrington, P. J., Wheatley, R., Zhuang, Q., Beanland, R., Sanchez, A. M., Krier, A. & EPSRC Studentship for MDLM (Funder), 1/09/2010, In : Journal of Physics D: Applied Physics. 43, 34, p. 345103

    Research output: Contribution to journalJournal article

  91. Published

    Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.

    Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R., 1/02/2010, In : Applied Physics Letters. 96, 5, p. 052115

    Research output: Contribution to journalJournal article

  92. 2009
  93. Published

    Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

    Chen, R., Phann, S., Sun, H. D., Zhuang, Q., Godenir, A. M. R. & Krier, A., 28/12/2009, In : Applied Physics Letters. 95, 26, p. 261905

    Research output: Contribution to journalJournal article

  94. Published

    Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

    Zhuang, Q. & Krier, A., 15/12/2009, In : IET Optoelectronics. 3, 6, p. 248-258 11 p.

    Research output: Contribution to journalJournal article

  95. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 1/12/2009, Conference on Lasers and Electro-Optics, CLEO 2009.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  96. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 16/11/2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 5226114

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  97. Published

    Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.

    Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q. D., Helm, M., Goiran, M. & Hill, G., 16/09/2009, In : Physical review B. 80, 11, p. 115207

    Research output: Contribution to journalJournal article

  98. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In : Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to journalJournal article

  99. Published

    Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

    Cook, N. B. & Krier, A., 13/07/2009, In : Applied Physics Letters. 95, 2, p. 021110

    Research output: Contribution to journalJournal article

  100. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In : Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to journalJournal article

  101. Published

    Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.

    Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 14/04/2009, In : Applied Physics Letters. 94, 15, p. 151902

    Research output: Contribution to journalJournal article

  102. Published

    Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 5/03/2009, In : Applied Physics Letters. 94, 9, p. 091111

    Research output: Contribution to journalJournal article

  103. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In : Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to journalJournal article

  104. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 1/01/2009, International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA)

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  105. Published

    Magnetoresistance and electron mobility in dilute nitride InAsN alloys

    Zhuang, Q., Feu, W. H. M., Patane, A., Makarovsky, O., Allison, G., Eaves, L., De La Mare, M., Krier, A. & Hill, G., 2009, In : AIP Conference Proceedings. 1288

    Research output: Contribution to journalJournal article

  106. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 2009, Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York: IEEE, p. 2813-2814 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

  107. 2008
  108. Published

    Electron coherence length and mobility in highly mismatched III-N-V alloys.

    Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M. & Hill, G., 23/12/2008, In : Applied Physics Letters. 93, 25, p. 252106

    Research output: Contribution to journalJournal article

  109. Published

    Growth optimization of self-organized InSb/InAs quantum dots.

    Zhuang, Q., Carrington, P. J. & Krier, A., 13/11/2008, In : Journal of Physics D: Applied Physics. 41, 23, 4 p., 232003.

    Research output: Contribution to journalJournal article

  110. Published

    Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 30/09/2008, In : Thin Solid Films. 516, 22, p. 8049-8058 10 p.

    Research output: Contribution to journalJournal article

  111. Published

    GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

    Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. & Ashley, T., 23/09/2008, In : Applied Physics Letters. 93, 12, p. 121106

    Research output: Contribution to journalJournal article

  112. Published

    Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

    Zhuang, Q., Godenir, A., Krier, A., Tsai, G. & Lin, H. H., 22/09/2008, In : Applied Physics Letters. 93, 12, p. 121903

    Research output: Contribution to journalJournal article

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