Anthony Krier - Publications & Outputs - Research Portal

Professor Anthony Krier

Emeritus Professor

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Published
A novel LED module for the detection of H2S at 3.8 mu m. .
Krier, A., Sherstnev, V. V. & Gao, H. H., 21/07/2000, In: Journal of Physics D: Applied Physics. 33, 14, p. 1656-1661 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots
Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M. & Krier, A., 12/02/2016, In: Nanotechnology. 27, 6, 6 p., 065602.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .
Chakrabarti, P., Krier, A. & Morgan, A. F., 1/10/2003, In: IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Antimonide quantum dot nanostructures for novel photonic device applications
Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J. R., Koenraad, P. M. & Smakman, E. P., 5/11/2013, The wonder of nanotechnology: quantum optoelectronic devices and applications . SPIE
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter (peer-reviewed) › peer-review
Published
Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates
Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells
Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M. C. & Botha, J. R., 03/2014, In: Semiconductor Science and Technology. 29, 3, 5 p., 035014.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation
James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A. & Krier, A., 04/2014, In: IET Optoelectronics. 8, 2, p. 76-80 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Characterisation of Ga(1-x)In(x)Sb quantum wells (x~0.3) grown on GaAs using AlGaSb interface misfit buffer
Hayton, J. P., Marshall, A. R. J., Thompson, M. D. & Krier, A., 19/05/2015, In: AIMS Materials Science. 2, 2, p. 86-96 11 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices
Garduno-Nolasco, E., Carrington, P. J., Krier, A. & Missous, M., 04/2014, In: IET Optoelectronics. 8, 2, p. 71-75 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells
James, J. S., Fujita, H., Carrington, P. J., Marshall, A. R. J., Krier, S. & Krier, A., 19/07/2024, In: Physics. 6, 3, p. 990-998 9 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .
Krier, A., Stone, M. & Krier, S. E., 06/2007, In: Semiconductor Science and Technology. 22, 6, p. 624-628 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Conductivity mechanisms in poly(p-phenylene vinylene) light-emitting diodes at high and low bias
Jones, R., Krier, A., Davidson, K., Schmit, J. P. N. & Zawadzka, J., 26/02/1999, In: Thin Solid Films. 340, 1-2, p. 221-229 9 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Coupling in type II GaSb/GaAs quantum ring solar cells
Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.
Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
Published
Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy.
Drachenko, O., Patane, A., Kozlova, N. V., Zhuang, Q., Krier, A., Eaves, L., Helm, M., EU Contract No. RII3-CT-2004-506239 (Funder), DFG Grant Nos. DR832/3-1 (Funder), DFG KO 3743/1-1 (Funder) & AOBJ: 550341 (Funder), 04/2011, In: Applied Physics Letters. 98, 16, p. 162109
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Delta doping and positioning effects of type II GaSb quantum dots in GaAs solar cell
James Asirvatham, J. S., Fujita, H., Fernández-Delgado, N., Herrera, M., Molina, S. I., Marshall, A. R. J. & Krier, A., 2015, In: Materials Research Innovations. 19, 7, p. 512-516 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .
Krier, A. & Huang, X. L., 21/01/2006, In: Journal of Physics D: Applied Physics. 39, 2, p. 255-261 7 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 30/09/2008, In: Thin Solid Films. 516, 22, p. 8049-8058 10 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707
Yin, M., Krier, A., Jones, R., Krier, S. & Campbell, D., 2006, Technologies for Optical Countermeasures III. Titterton, D. (ed.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 39707-39707 6 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Development of dilute nitride materials for mid-infrared diode lasers
Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A. & Kudrawiec, R., 09/2012, In: Semiconductor Science and Technology. 27, 9, 8 p., 094009 .
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE
Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, B. & Clowes, S. (eds.). DORDRECHT: Springer, p. 69-72 4 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE.
Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 69-72 4 p. (Springer Proceedings in Physics).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes
Cheetham, K. J., Krier, A., Marko, I. P., Aldukhayel, A. & Sweeney, S. J., 3/10/2011, In: Applied Physics Letters. 99, 14, p. - 3 p., 141110.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results.
Chakrabarti, P., Krier, A. & Morgan, A. F., 1/09/2003, In: Optical Engineering. 42, 9, p. 2614-2623 10 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells
Fernández-Delgado, N., Herrera, M., Molina, S. I., Castro, C., Duguay, S., James, J. S. & Krier, A., 30/12/2015, In: Applied Surface Science. 359, p. 676-678 3 p.
Research output: Contribution to Journal/Magazine › Letter › peer-review
Published
Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.
Patane, A., Feu, W. H. M., Makarovsky, O., Drachenko, O., Eaves, L., Krier, A., Zhuang, Q. D., Helm, M., Goiran, M. & Hill, G., 16/09/2009, In: Physical review B. 80, 11, p. 115207
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices
Khan, A., Repiso Menendez, E., Herrera, M., Carrington, P., De La Mata, M., Pizarro, J., Krier, A. & Molina, S., 16/12/2019, In: Nanotechnology. 31, 10, 9 p., 105702.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy
De La Mare, M., Zhuang, Q., Krier, A. & Patane, A., 3/10/2012, In: Journal of Physics D: Applied Physics. 45, 39, p. 395103-395105 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared
Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In: Infrared Physics and Technology. 93, p. 375-380 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers
Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO 2 detection
Al-Saymari, F. A., Craig, A. P., Noori, Y. J., Lu, Q., Marshall, A. R. J. & Krier, A., 1/05/2019, In: Applied Physics Letters. 114, 17, 4 p., 171103.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy
Krier, A. & Huang, X. L., 2002, Physics and Simulation of Optoelectronic Devices X. Blood, P., Osinski, M. & Arakawa, Y. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 70-78 9 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Electroluminescence from InSb-based mid-infrared quantum well lasers.
Smith, S. J., Przeslak, S. J. B., Nash, G. R., Storey, C. J., Andreev, A. D., Krier, A., Yin, M., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 2008, Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 159-161 3 p. (Springer Proceedings in Physics).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
Electron coherence length and mobility in highly mismatched III-N-V alloys.
Patane, A., Allison, G., Eaves, L., Kozlova, N. V., Zhuang, Q. D., Krier, A., Hopkinson, M. & Hill, G., 23/12/2008, In: Applied Physics Letters. 93, 25, p. 252106
Research output: Contribution to Journal/Magazine › Journal article › peer-review
E-pub ahead of print
Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications
Yeap, G. H., Rybchenko, S., Itskevich, I., Haywood, S., Carrington, P. & Krier, A., 31/05/2023, (E-pub ahead of print) In: Defect and Diffusion Forum. 425, p. 3-8 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells
Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M. & Krier, A., 3/12/2012, In: Applied Physics Letters. 101, 23, 5 p., 231101.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings
Wagener, M. C., Carrington, P. J., Botha, J. R. & Krier, A., 28/07/2014, In: Journal of Applied Physics. 116, 4, 6 p., 044304.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
Wheatley, R., Kesaria, M., Mwast, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. & Krier, A., 10/06/2015, In: Applied Physics Letters. 106, 4 p., 232105.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .
Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In: IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
FDTD modelling of mid infrared disk lasers
Pugh, J. R., Buss, I. J., Nash, G. R., AshleY, T., Krier, A., Cryan, M. J. & Rarity, J. G., 2007, ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4. Marciniak, M. (ed.). New York: IEEE, p. 208-211 4 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Fundamental physics and practical realisation of mid-infrared photodetectors.
Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X.-L. & Sherstnev, V. V., 10/2004, In: Proceedings of SPIE. 5564, p. 92-104 13 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers
Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers
Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes
Smirnov, V. M., Batty, P. J., Jones, R., Krier, A., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 04/2007, In: physica status solidi (a). 204, 4, p. 1047-1050 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.
Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. & Ashley, T., 23/09/2008, In: Applied Physics Letters. 93, 12, p. 121106
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
GaSb-based solar cells for multi-junction integration on Si substrates
Tournet, J., Parola, S., Vauthelin, A., Montesdeoca Cardenes, D., Soresi, S., Martinez, F., Lu, Q., Cuminal, Y., Carrington, P. J., Décobert, J., Krier, A., Rouillard, Y. & Tournié, E., 03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 444-450 7 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
General theory of multi-phase melt crystallization. .
Charykov, N. A., Sherstnev, V. V. & Krier, A., 02/2002, In: Journal of Crystal Growth. 234, 4, p. 762-772 11 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.
de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In: Applied Physics Letters. 95, 3, p. 031110
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Growth of InAsSb quantum wells by liquid phase epitaxy.
Yin, M., Krier, A. & Jones, R., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 65-68 4 p. (Springer Proceedings in Physics).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .
Huang, X. L., Labadi, Z., Hammiche, A. & Krier, A., 7/12/2002, In: Journal of Physics D: Applied Physics. 35, 23, p. 3091-3095 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Growth optimization of self-organized InSb/InAs quantum dots.
Zhuang, Q., Carrington, P. J. & Krier, A., 13/11/2008, In: Journal of Physics D: Applied Physics. 41, 23, 4 p., 232003.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon
Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon
Delli, E., Hodgson, P. D., Repiso Menendez, E., Craig, A. P., Hayton, J., Lu, Q., Marshall, A. R. J., Krier, A. & Carrington, P. J., 1/06/2019, In: IEEE Photonics Journal. 11, 3, 8 p., 2200608.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High power 4.6 mu m light emitting diodes for CO detection. .
Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y., 21/12/1999, In: Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High quality InAs grown by liquid phase epitaxy using gadolinium gettering
Gao, H. H., Krier, A. & Sherstnev, V. V., 05/1999, In: Semiconductor Science and Technology. 14, 5, p. 441-445 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High tunability and superluminescence in InAs mid-infrared light emitting diodes. .
Sherstnev, V. V., Krier, A. & Hill, G., 7/02/2002, In: Journal of Physics D: Applied Physics. 35, 3, p. 196-198 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Highly-mismatched InAs/InSe heterojunction diodes
Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A., Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. & Patane, A., 2016, In: Applied Physics Letters. 109, 18, 4 p., 182115.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air
Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.
Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review
Published
High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .
Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. & Sherstnev, V. V., 24/02/2003, In: Applied Physics Letters. 82, 8, p. 1149-1151 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells
Wagener, M. C., Montesdeoca Cardenes, D., Lu, Q., Marshall, A. R. J., Krier, A., Botha, J. R. & Carrington, P. J., 01/2019, In: Solar Energy Materials and Solar Cells. 189, p. 233-238 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.
Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R., 1/02/2010, In: Applied Physics Letters. 96, 5, p. 052115
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
H-tailored surface conductivity in narrow band gap In(AsN)
Velichko, A. V., Patane, A., Capizzi, M., Sandall, I. C., Giubertoni, D., Makarovsky, O., Polimeni, A., Krier, A., Zhuang, Q. & Tan, C. H., 12/01/2015, In: Applied Physics Letters. 106, 2, 4 p., 022111.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels
Velichko, A. V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q. & Patane, A., 20/08/2014, In: Physical review B. 90, 7 p., 085309.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
In(AsN) mid-infrared emission enhanced by rapid thermal annealing
Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C
Lu, Q., Zhou, X., Krysa, A., Marshall, A., Carrington, P., Tan, C.-H. & Krier, A., 1/06/2018, In: Solar Energy Materials and Solar Cells. 179, p. 334-338 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs whispering gallery mode lasers for the mid-infrared spectral range. .
Sherstnev, V., Monakhov, A., Krier, A. & Wright, D. A., 02/2005, In: IEE Proceedings - Optoelectronics. 152, 1, p. 1-5 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency
Lu, Q., Krier, A., Zhou, Y., Cai, X., Xu, Z., Chen, J. & He, L., 27/06/2019, In: Applied Physics Letters. 114, 25, 5 p., 253507.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs
Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In: Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAs-based dilute nitride materials and devices for the mid-infrared spectral range
Krier, A., De La Mare, M., Zhuang, Q., Carrington, P. J. & Patane, A., 4/02/2013, In: Proceedings of SPIE. 8631, 86311Q.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
Gao, H. H., Krier, A., Sherstnev, V. & Yakovlev, Y., 7/08/1999, In: Journal of Physics D: Applied Physics. 32, 15, p. 1768-1772 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance
Craig, A., Thompson, M., Tian, Z.-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In: Semiconductor Science and Technology. 30, 10, 7 p., 105011.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InAsSbP quantum dots grown by liquid phase epitaxy
Krier, A., Labadi, Z. & Hammiche, A., 21/10/1999, In: Journal of Physics D: Applied Physics. 32, 20, p. 2587-2589 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, B. & Clowes, S. (eds.). DORDRECHT: Springer, p. 129-131 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.
Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 129-131 3 p. (Springer Proceedings in Physics).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
InSb-based quantum dot nanostructures for mid-infrared photonic devices
Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In: Proceedings of SPIE. 9919, 99190C.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .
Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In: Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface luminescence and lasing at a type II single broken-gap heterojunction
Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2003, 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Alferov, Z. & Esaki, L. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 340-342 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .
Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.
Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P., 7/04/2002, In: Journal of Physics D: Applied Physics. 35, 7, p. 631-636 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .
Krier, A., Gao, H. H. & Sherstnev, V. V., 06/2000, In: IEE Proceedings - Optoelectronics. 147, 3, p. 217-221 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Investigation on InGaAs/InAlAs quantum cascade lasers.
Zhang, Q. S., Liu, F. Q., Zhang, Y. Z., Wang, Z. G., Gao, H. H. & Krier, A., 2001, In: Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
LEDs for formaldehyde detection at 3.6 mu m. .
Krier, A. & Sherstnev, V. V., 7/02/2001, In: Journal of Physics D: Applied Physics. 34, 3, p. 428-432 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer
Krier, A., Chubb, D., Krier, S. E., Hopkinson, M. & Hill, G., 10/1998, In: IEE Proceedings - Optoelectronics. 145, 5, p. 292-296 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor
Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A. & Patane, A., 2/10/2012, In: Nature Communications. 3, 5 p., 1097.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Liquid phase epitaxial growth and morphology of InSb quantum dots. .
Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In: Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings
Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
Lu, Q., Montesdeoca Cardenes, D., Carrington, P. J., Marshall, A. R. J., Krier, A. & Beanland, R., 1/03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 406-412 7 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes
Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A., 02/2011, In: Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion
Krier, A., Yin, M., Marshall, A. R. J. & Krier, S. E., 06/2016, In: Journal of Electronic Materials. 45, 6, p. 2826-2830 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low bandgap mid-infrared thermophotovoltaic arrays based on InAs
Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In: Infrared Physics and Technology. 73, p. 126-129 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low leakage-current InAsSb nanowire photodetectors on silicon
Thompson, M. D., Alhodaib, A., Craig, A. P., Robson, A. J., Aziz, A., Krier, A., Svensson, J., Wernersson, L.-E., Sanchez, A. M. & Marshall, A. R. J., 13/01/2016, In: Nano Letters. 16, 1, p. 182-187 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Low-voltage ZnO thin-film transistors employing Nd2O3 high-k dielectrics deposited by spray pyrolysis in air
Bin Esro, M., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.
Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review
Published
Magnetoresistance and electron mobility in dilute nitride InAsN alloys
Zhuang, Q., Feu, W. H. M., Patane, A., Makarovsky, O., Allison, G., Eaves, L., De La Mare, M., Krier, A. & Hill, G., 2009, In: AIP Conference Proceedings. 1288
Research output: Contribution to Journal/Magazine › Journal article
Published
MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices
de la Mare, M., Krier, A., Zhuang, Q., Carrington, P. & Patane, A., 2011, In: Proceedings of SPIE. 7945, 79450L
Research output: Contribution to Journal/Magazine › Journal article
Published
Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications
Lu, Q., Marshall, A. & Krier, A., 29/05/2019, In: Materials. 12, 11, 8 p., 1743.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Mid-infrared diode lasers for free space optical communications
Yin, M., Krier, A., Krier, S., Jones, R. & Carrington, P., 2006, Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. Sjoqvist, L., Wilson, R. & Merlet, T. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. U101-U106 6 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .
Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G. & Lin, H. H., 28/08/2006, In: Applied Physics Letters. 89, 9, p. 091110
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .
Krier, A. & Huang, X. L., 11/2002, In: Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.
Cook, N. B. & Krier, A., 13/07/2009, In: Applied Physics Letters. 95, 2, p. 021110
Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Professor Anthony Krier

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